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Semiconductor device, method of manufacturing semiconductor device, and integrated circuit

A technology of integrated circuits and semiconductors, which is applied in the manufacture of semiconductor/solid-state devices, semiconductor devices, and electric solid-state devices, and can solve problems such as power loss.

Active Publication Date: 2020-01-21
INFINEON TECH AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the rectification, a power loss occurs

Method used

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  • Semiconductor device, method of manufacturing semiconductor device, and integrated circuit
  • Semiconductor device, method of manufacturing semiconductor device, and integrated circuit
  • Semiconductor device, method of manufacturing semiconductor device, and integrated circuit

Examples

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Embodiment Construction

[0016] In the following detailed description, reference is made to the accompanying drawings, which form a part hereof, and in which are shown by way of illustration specific embodiments in which the invention may be practiced. In this regard, directional terms such as "top", "bottom", "front", "rear", "front", "tail", etc. are used as references for orientation of the figures being described. Since components of embodiments of the present invention may be disposed in many different orientations, orientation terminology is used for purposes of illustration and not limitation. It is to be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope defined by the claims.

[0017] The description of the examples is not limiting. In particular, elements of a described embodiment may be combined with elements of a different embodiment hereinafter.

[0018] The terms "wafer", "substrate" or "semiconductor substra...

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Abstract

A semiconductor device formed in a semiconductor substrate includes a source region, a drain region, and a gate electrode, and a body region disposed between the source region and the drain region. The gate electrode is disposed adjacent to at least two sides of the body region, and the source region and the gate electrode are coupled to a source terminal. The width of the body region between two sides of the body region is selected so that the body region is configured as a fully depleted type.

Description

Background technique [0001] In the field of automotive applications and automotive circuits, standard pn diodes are used for rectifying the voltage generated by the generator. Due to this rectification, power loss occurs. The power loss is given by the average current produced by the generator multiplied by the forward voltage. The alternator is one of the largest sources of power loss in a car due to the enormously increased demand for electrical current. In order to reduce these losses, efficient diodes known as high-efficiency diodes have been sought. One possibility to reduce power loss is by reducing the forward voltage. [0002] Another requirement for generator diodes to meet is their breakdown voltage in the event of a load dump. To protect the electrical components in a car, the diodes must dissipate all the energy produced by the generator under certain voltage windows. [0003] Since the battery must not be discharged through the diode, the constraint while red...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/41H01L29/06H01L27/06H01L21/822
CPCH01L29/66204H01L29/7391H01L29/7813H01L29/66734H01L29/20
Inventor A·梅瑟T·施勒塞尔F·希尔勒
Owner INFINEON TECH AG