Semiconductor substrate manufacture method

Abstract

The invention relates to a semiconductor substrate manufacture method comprising following steps of: providing a semiconductor substrate equipped with a nucleating growth layer, forming a particle etching mask on the nucleating growth layer; etching the nucleating growth layer, filling an etching trench with inorganic gel, removing the particle etching mask, growing polycrystal columns, and laterally bonding the polycrystal columns. Thus, the semiconductor substrate with a low-defect flat bonding film is formed. The manufacture method restricts a defect of the nucleating growth layer or the polycrystal column growth between the polycrystal columns. The tops of the polycrystal columns are bonded and then form the semiconductor substrate with a low-defect flat bonding film, namely a low-defect semiconductor substrate.

Description

technical field [0001] The invention relates to a method for manufacturing a semiconductor substrate, in particular to a method for manufacturing a semiconductor substrate with a low-defect planar junction film. Background technique [0002] In the prior known technology, the thin film on the semiconductor substrate is often manufactured by adding different concentrations of additives to make the polycrystalline column undergo epitaxy lateral overgrowth. Additives can make each polycrystalline column widen independently and vertically upward gradually. Since additives with a specific concentration will only widen the polycrystalline column laterally to a certain limit and then stop widening, additives with different concentration gradients can be used to Controls the width of the polycrystalline pillars. After the additive concentration is adjusted several times in a row, adjacent polycrystalline pillars will begin to join together to form a thin film on the top of the poly...

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Problems solved by technology

[0003] However, the growth of thin films on conventional semiconductor substrates and the vertical growth of polycrystalline pillars are quite sensitive to the concentration of additives. When the width of polycrystalline pillars is controlled by the concentration of additives, the height of polycrystalline pillars is prone to be uneven. phenomenon, and bump defects in multiple regions are formed on the surface of the film above the polycrystalline pillars. The height of the bump defects can reach about 2.5-4.5 microns, and the range of the bump defects can reach 5 microns × 12 microns

[0004] The accumulation of uneven surface and lattice dislocation of semiconductor materials on the surface of the film will make the film structure fragile and fragile, and when it is applied to LED manufacturing, the occurrence of this phenomenon will reduce the quantum efficiency and electron, The probability of hole recombination, thereby reducing the overall light output efficiency of the LED (Light Output Efficiency)

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