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Method for producing pixel electrode

A pixel electrode and manufacturing method technology, applied in the field of liquid crystal display manufacturing, can solve problems such as easy limitation of film formation mechanism, lower quality of liquid crystal panel, discontinuous film, etc., and achieve the effect of preventing normal operation

Inactive Publication Date: 2014-12-24
HONG FU JIN PRECISION IND (SHENZHEN) CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Contact holes are usually formed by etching. Smaller contact holes are prone to be chamfered or uneven in the cross-section of the etched contact hole due to various reasons such as the ratio control of the etchant and misalignment of the mask. The surface on which the transparent conductive layer is deposited is uneven, discontinuous or chamfered
However, the existing transparent conductive layer is usually made of thin film materials by material vapor deposition (PVD), and its film formation mechanism is easily limited by the conditions of the deposition surface. The deposition of the layer produces a cross-section or a discontinuous film, and then forms a bad pixel electrode, which makes the pixel unit unable to work normally and reduces the quality of the liquid crystal panel

Method used

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  • Method for producing pixel electrode

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Embodiment Construction

[0018] Such as figure 1 As shown, the manufacturing method of the pixel electrode provided in the embodiment of the present invention includes the following steps:

[0019] Step 1: Provide a substrate 10, and form gate 20, source 30, drain 40 and passivation layer 50 on this substrate, be formed with contact hole 52 on the passivation layer 50 to separate drain 40 from contact hole 52 exposed in

[0020] Step 2: coating nano-metal material to form a conductive layer 60 covering the passivation layer 50 and the drain 40 exposed from the contact hole 52; and

[0021] Step 3: patterning the conductive layer to form the pixel electrode 70 .

[0022] see figure 2 In Step 1, the gate 20 , the source 30 , the drain 40 and the passivation layer 50 can be formed using four masking processes respectively. The first masking process is used to form the gate metal layer first, that is, to form a gate metal layer and a first photoresist layer sequentially on the substrate 10; and then ...

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Abstract

The invention provides a method for producing a pixel electrode. The method includes the following steps that a substrate is provided, a grid electrode, a source electrode, a drain electrode and a passivation layer are formed on the substrate, a contact hole is formed in the passivation layer so that the drain electrode can be exposed from the contact hole, coating of a nano-metallic material is performed to form a conducting layer to cover the passivation layer and the drain electrode which is exposed from the contact hole, and patterning of the conducting layer is performed to form the pixel electrode.

Description

technical field [0001] The invention relates to a method for manufacturing a liquid crystal display, in particular to a method for manufacturing a pixel electrode. Background technique [0002] In the modern information society, displays, as information transmission media, are valued. Key to the development of displays is the need for low power consumption, thin and light weight, and high image quality. Liquid crystal displays, which are the mainstream devices in flat panel displays, display desired images by respectively providing data signals to a plurality of pixel units arranged in a matrix shape and controlling the light transmittance of the plurality of pixel units according to image information. [0003] In order to improve the resolution of the liquid crystal display, it is usually necessary to shrink each pixel unit to install more pixel units in a fixed area of ​​the liquid crystal display panel area, and at the same time, it is necessary to increase the aperture ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02F1/1343G03F7/20
Inventor 高逸群
Owner HONG FU JIN PRECISION IND (SHENZHEN) CO LTD
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