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Multi-value operation method of RRAM (resistance random access memory) unit

A technology of resistive memory and storage unit, used in static memory, read-only memory, digital memory information and other directions, can solve the problems of data operation difficulty, data misreading, uneven distribution of resistance value windows, etc., to achieve a large storage window, The effect of low misread rate and low power consumption

Active Publication Date: 2014-12-24
TSINGHUA UNIV
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Problems solved by technology

It can be seen that the distribution of resistance value windows obtained by the two adjustment methods is very uneven, which brings certain difficulties to the operation of data; and the windows between some adjacent resistance values ​​are even smaller than an order of magnitude, which is easy in practical applications. Misreading of data is caused, so a new operation method is needed to improve these problems and realize high-performance multi-value storage function

Method used

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  • Multi-value operation method of RRAM (resistance random access memory) unit
  • Multi-value operation method of RRAM (resistance random access memory) unit
  • Multi-value operation method of RRAM (resistance random access memory) unit

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Embodiment Construction

[0017] The present invention proposes a multi-value operation method for a resistive variable memory storage unit, which realizes multi-value storage by comprehensively adjusting the programming limit current and erasing cut-off voltage of the storage unit. current to achieve a lower resistance state of the memory cell, wherein the larger the programming limit current value, the smaller the resistance of the memory cell, and the higher resistance state of the memory cell is achieved by applying an erase cut-off voltage and a programming voltage to the memory cell , wherein the greater the absolute value of the erase cut-off voltage, the greater the resistance of the memory cell.

[0018] Specifically, when the storage unit is an X-bit storage unit, the operation method may include the following steps:

[0019] (1) When the storage unit is an X-bit storage unit, it corresponds to 2 X The resistance states are expressed as S1, S2...S2 according to the resistance value from smal...

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Abstract

The invention discloses a multi-value operation method of an RRAM (resistance random access memory) unit. The multi-value storage is realized by comprehensively adjusting a programming limit current and an erasion cutoff voltage of the RRAM unit, wherein a relative low resistance state of the RRAM unit is realized by applying a cutoff voltage and a programming limit current to the RRAM unit, and the bigger the programming limit current value is, the smaller the resistance of the RRAM unit is; a relative high resistance state of the RRAM unit is realized by applying an erasion cutoff voltage and a programming voltage to the RRAM unit and the bigger the erasion cutoff voltage is, the bigger resistance of the RRAM unit is. The operation method has the advantages of large storage window, simplicity, feasibility, small misreading rate and power.

Description

technical field [0001] The invention relates to a non-volatile memory technology, in particular to a multi-value operation method of a resistive variable memory storage unit. Background technique [0002] Resistive Random Access Memory (RRAM) is a non-volatile memory that has developed rapidly in the past ten years and has a very wide market demand. The device unit of this type of memory is usually a MIM (metal-insulator-metal) structure. Its manufacturing method is simple, it is highly compatible with the CMOS process, it has large data storage capacity, high density, fast operation speed and high reliability. One of the non-volatile memories that replace traditional mechanical hard drives and flash memories. [0003] In recent years, research reports and test chip products on RRAM have emerged continuously at home and abroad. Both the industry and academia have put forward higher requirements for the performance of RRAM, and the further improvement of storage capacity and...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/06G11C11/56
Inventor 袁方张志刚潘立阳
Owner TSINGHUA UNIV
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