Semiconductor integrated device

Abstract

The invention discloses a semiconductor integrated device, which includes a base, a plurality of active fins, and a plurality of first protection fins. At least one active area is defined on the base, the plurality of active fins are disposed in the active area, and the plurality of first protection fins surround the active area, and the plurality of active fins and the plurality of first protection fins The fins all extend along a first direction.

Description

technical field [0001] The present invention relates to a semiconductor integrated device, in particular to a semiconductor integrated device including a Fin Field effect transistor (FinField effect transistor, hereinafter referred to as FinFET) element and a protection structure. Background technique [0002] When the device is developed to the 65nm technology generation, it is difficult to continue to shrink using the traditional planar metal-oxide-semiconductor (MOS) transistor manufacturing process. Therefore, the existing technology proposes to use three-dimensional or non-planar ) multi-gate transistor components such as FinFET components to replace planar transistor components solution. [0003] Existing FinFET elements first use etching to pattern the silicon layer on the surface of a substrate to form a fin-shaped silicon film (not shown) in the substrate, and form an insulating layer covering part of the silicon film on the silicon film , and then form the gate co...

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Problems solved by technology

For example, the fin structure of the FinFET device is very susceptible to physical or electrical external forces due to its slender outline, or even be damaged by the above external forces

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