A method for preparing a two-dimensional atomic crystal stack structure by transfer

Abstract

The invention discloses a method for transferring and preparing a two-dimensional atomic crystal laminated structure and relates to a stripping, positioning and transferring method for substrate-based two-dimensional atomic crystal film. The method comprises the specific steps of carrying out spin-coating on the surface of the two-dimensional atomic crystal film through utilization of polystyrene film, wherein the two-dimensional atomic crystal film is prepared based on a substrate; separating two-dimensional atomic crystals from the substrate through utilization of water tension and transferring the two-dimensional atomic crystals to dimethyl siloxane polymer; attaching the two-dimensional atomic crystals / polystyrene / dimethyl siloxane polymer on a target material through utilization of the van-der waals force; and separating the dimethyl siloxane polymer in a heating mode and removing the polystyrene through utilization of toluene solution or a vacuum annealing method, namely preparing the two-dimensional atomic crystal laminated structure. The method is simple in operation and is high in success rate, is fast and can be widely applied to the field of a large-area ultra-thin material photoelectric sensor.

Description

technical field [0001] The invention relates to the technical field of positioning transfer, and more specifically, to a method for preparing a two-dimensional atomic crystal stack structure by transfer. Background technique [0002] New two-dimensional atomic crystals include graphene, boron nitride, black phosphorus and two-dimensional transition metal chalcogenides, such as: molybdenum disulfide, molybdenum diselenide, molybdenum ditelluride, tungsten disulfide, tungsten diselenide and Tungsten ditelluride, etc., which have unique properties of force, heat, electricity, and light, have attracted the attention of researchers. Then people have also carried out a series of studies based on new two-dimensional atomic-level stacked structures, among which the preparation of ultra-thin two-dimensional The stacked structure of atomic crystals has become a research hotspot in the application field of optoelectronic materials and devices, such as high electron mobility tunnel fiel...

AI Technical Summary

Problems solved by technology

In this method, the advantage of using mechanical exfoliation to prepare two-dimensional atomic crystal stack structures is that there is less glue residue, and the residual glue treatment is relatively easy, but the disadvantage is that it is very difficult to prepare a single-layer two-dimensional atomic crystal sample, and the peeling The sample is easily broken, the sample area is small, and the technical proficiency is high, and the success rate of preparing the laminated structure sample is low, the repetition rate is low, and the preparation process takes a long time, which is not conducive to practical application

This method uses PMMA to transfer two-dimensional atomic crystals and needs to etch the substrate. The disadvantage of this method is that it takes a long time to etch the substrate, bubbles will be generated during the etching process, and the corrosion ions dope the single-layer atomic crystal material, even Will destroy the structure and reduce the performance of the material itself

In addition, it is difficult to remove clean PMMA glue with acetone, and many organic particles will remain, which will affect the characteristics of the device; in addition, the method of micro-area operation of the probe is used for sample positioning, and the stacking control is poor, and it is difficult to accurately align the sample to prepare ultra-thin Two-dimensional atomic crystal stack structure

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