Radio frequency control system and method, reaction chamber, plasma processing equipment

Abstract

The invention relates to a radio frequency control system, a radio frequency control method, a reaction chamber and plasma processing equipment. The radio frequency control system comprises a radio-frequency power output module, a detection module and a control module, wherein the radio-frequency power output module is used for outputting radio-frequency power to a coil; the detection module is used for detecting radio-frequency current in the coil and sending the detected radio-frequency current to the control module; the control module is used for acquiring radio-frequency current deviation according to a radio-frequency current value sent by the detection module and a preset radio-frequency current standard value, calculating a radio-frequency power output value according to the radio-frequency current deviation and sending a control signal to the radio-frequency power output module according to the radio-frequency power output value; the radio-frequency power output module outputs the radio-frequency power output module to the coil according to the control signal. The radio frequency control system can correct the deviation between the radio-frequency current value in the coil and the radio-frequency current standard value so as to improve the technological accuracy and technological repeatability of the plasma processing equipment.

Description

technical field [0001] The invention relates to the technical field of microelectronic processing, in particular to a radio frequency control system and method, a reaction chamber, and plasma processing equipment. Background technique [0002] At present, Inductively Coupled Plasma (ICP for short) equipment is widely used in In the process of etching substrates such as sapphire substrates. [0003] figure 1 It is a schematic structural diagram of an existing ICP device. Such as figure 1 As shown, the ICP device includes a reaction chamber 4 and an inductively coupled coil 3 . Wherein, an electrostatic chuck 5 is provided in the reaction chamber 4 to carry the processed workpiece 6 by means of electrostatic adsorption, and the electrostatic chuck 5 is electrically connected to the first matcher 7 and the first radio frequency power supply 8 in turn; The inductively coupled coil 3 is disposed above the top wall of the reaction chamber 4 , and is electrically connected to ...

AI Technical Summary

Problems solved by technology

[0006] Due to the impedance with nonlinear characteristics of the plasma, and the processing and installation errors generated in the process of processing and installing the inductive coupling coil 3, the actual value of the radio frequency current in the inductive coupling coil 3 is often the same as the preset value. The RF power output by the second RF power supply 1 has a deviation between the ideal values ​​of the RF current corresponding to each other, resulting in the plasma parameters such as the actual density and distribution of the plasma in the reaction chamber 4 failing to reach the ideal value, resulting in ICP The process accuracy of the equipment is reduced

[0007] Moreover, if there is a deviation between the actual value of the radio frequency current in the inductive coupling coil 3 and the ideal value of the radio frequency current, then between the processing of different batches of the same ICP equipment, or between the processing of different ICP equipment, even if the second radio frequency The power supply 1 outputs the same radio frequency power, and the actual value of the radio frequency current may be different. Therefore, it is difficult to ensure the plasma parameters by adjusting the radio frequency power output by the second radio frequency power supply 1 to control the radio frequency current in the inductively coupled coil 3. Consistency and process repeatability, resulting in reduced yield

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