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A kind of polycrystalline ingot seed crystal melting control method and polycrystalline silicon ingot furnace

A polysilicon ingot furnace and thermocouple technology, which is applied in the field of polysilicon ingot seed crystal melting control and polysilicon ingot furnace, can solve the problems such as the thermal radiation influence of the side heater of the thermocouple, and meet the requirements of high-efficiency ingot casting process, Simple installation method and the effect of simple installation method

Active Publication Date: 2017-07-04
JIANGXI SAI WEI LDK SOLAR HI TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to solve the above problems, the present invention provides a method for controlling the melting of polycrystalline ingot seed crystals. In this method, thermocouples are arranged at the corners of the bottom of the crucible, which solves the problem that the thermocouples on the side walls of the crucible in the prior art are easily affected. The problem of the thermal radiation influence of the external heater, the method can control the melting state of the seed crystal more accurately, and at the same time, the installation method of the thermocouple is more convenient; the invention also provides a polysilicon ingot casting furnace

Method used

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  • A kind of polycrystalline ingot seed crystal melting control method and polycrystalline silicon ingot furnace
  • A kind of polycrystalline ingot seed crystal melting control method and polycrystalline silicon ingot furnace
  • A kind of polycrystalline ingot seed crystal melting control method and polycrystalline silicon ingot furnace

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Effect test

Embodiment 1

[0058] A method for controlling the melting of polycrystalline ingot seed crystals, comprising the following steps:

[0059] (1) Lay a layer of monocrystalline silicon with a thickness of 3 cm on the bottom of the crucible as a seed crystal; put polysilicon raw material on the surface of the seed crystal, control the thermal field and process, and melt the polysilicon raw material from top to bottom;

[0060] (2) Use a thermocouple to obtain a temperature signal at the corner of the bottom of the crucible, where the temperature signal is the temperature at the corner of the bottom of the crucible and the slope of the temperature change;

[0061] (3) According to the obtained temperature signal, judge the height of the melting of the seed crystal; when the temperature signal has a sudden rise in a sudden point, it means that the seed crystal has melted to the set height, and at this time control the thermal field and process , entering the crystal growth stage.

[0062] Figu...

Embodiment 2

[0064] A method for controlling the melting of polycrystalline ingot seed crystals, comprising the following steps:

[0065] (1) Laying a layer of monocrystalline silicon with a thickness of 2 cm on the bottom of the crucible as a seed crystal; loading silicon raw material on the surface of the seed crystal, controlling the thermal field and process, and melting the silicon raw material from top to bottom;

[0066] (2) Using the first thermocouple 180 and the second thermocouple 190 to obtain the temperature signal at the corner of the bottom of the crucible, the temperature signal is the temperature at the corner of the bottom of the crucible and the value of the temperature change rate;

[0067] (3) According to the obtained temperature signal, judge the height of the melting of the seed crystal; when the temperature signal has a sudden rise in a sudden point, it means that the seed crystal has melted to the set height, and at this time control the thermal field and process ...

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Abstract

The invention provides a polycrystalline ingot casting seed crystal melting control method, comprising the following steps: (1) paving seed crystals at the bottom of a crucible; filling polycrystalline raw materials on the surfaces of the seed crystals, and controlling a thermal field and a process, to gradually melt the seed crystals and the polycrystalline raw materials from top to bottom; (2) obtaining a temperature signal at the corner of the bottom of the crucible by using a thermocouple, wherein the temperature signal is at least one of temperature at the corner of the bottom of the crucible, the temperature change slope and accumulated temperature change slope; and (3) judging the melting height of the seed crystals according to the obtained temperature signal, wherein when the temperature signal suddenly occurs a raising mutation point, the seed crystals are melted to a preset height, and at this time, the thermal field and the process are controlled to enter a crystal growth stage. The method is used for solving the problem in the prior art that the thermocouple on the side wall of the crucible is liable to be influenced by the heat radiation of the heater at the side and more accurately controlling the melting condition of the seed crystals. The invention further provides a polycrystalline ingot casting furnace.

Description

technical field [0001] The invention relates to the technical field of photovoltaic silicon chip production, in particular to a method for controlling the melting of polycrystalline ingot seed crystals and a polycrystalline silicon ingot furnace. Background technique [0002] At present, in the rapidly developing solar photovoltaic power generation industry, crystalline silicon solar cells are the most widely used, and crystalline silicon solar cells are mainly made of Czochralski monocrystalline silicon wafers (CZ) or cast polycrystalline silicon wafers (DSS). Among them, Czochralski monocrystalline silicon has high photoelectric conversion efficiency, but low production capacity and high production cost; compared with Czochralski monocrystalline silicon, ingot polycrystalline silicon wafers have high production capacity and low cost, but low photoelectric conversion efficiency. [0003] In order to improve the efficiency of ingot-cast polycrystalline silicon wafers, those ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B28/06C30B29/06
Inventor 刘俊胡动力李松林何亮毛伟
Owner JIANGXI SAI WEI LDK SOLAR HI TECH CO LTD