Junctionless transistor and manufacturing method thereof

Abstract

The invention discloses a junctionless transistor and a manufacturing method thereof. The manufacturing method comprises the following steps: providing a substrate, wherein the substrate comprises a dielectric layer, and a first semiconductor layer arranged on the dielectric layer; imaging the first semiconductor layer to form a source region, a drain region, and a fin between the source region and the drain region; removing partial dielectric layer below the fin so that the fin is suspended on the residual dielectric layer; smoothing the surface of the fin to form a nanowire; performing channel ion doping on the nanowire so that the ion doping concentration is gradually decreased from the nanowire surface to the nanowire center; forming a ring fence structure on the doped nanowire; and performing the source-drain doping which is similar to the nanowire channel ion doping on the source region and the drain region to form a source electrode and a drain electrode. The performance of the junctionless transistor is optimized through the adoption of the method disclosed by the invention.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a junctionless transistor and a manufacturing method thereof. Background technique [0002] In order to keep pace with Moore's Law, the feature size of semiconductor devices (such as field effect transistors) has been continuously reduced. Improving performance by shrinking the physical size of conventional field-effect transistors has faced some difficulties due to the problems of short channel effects and gate leakage currents at small sizes that degrade the switching performance of transistors. [0003] In order to suppress the short-channel effect, a nanowire field-effect transistor (Nanowire Field-Effect Transistor, NWFET) technology has been developed in the prior art. [0004] NWFET has a one-dimensional nanowire channel. Due to the quantum confinement effect, the carriers in the channel are distributed on the surface, so the carrier transport is less affected by s...

AI Technical Summary

Problems solved by technology

Improving performance by reducing the physical size of conventional field effect transistors has faced some difficulties due to the short channel effect and gate leakage current problems at small sizes that deteriorate the switching performance of transistors

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