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Zn-sb-se phase change memory film material for phase change memory

A phase change memory, zn-sb-se technology, applied in electrical components and other directions, can solve the problems of low crystalline resistance, high melting point, short data storage life, etc., achieve strong crystalline resistance, strong high temperature thermal stability, Good resistance difference

Active Publication Date: 2016-11-30
NINGBO UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] (1), GST has a large density change during phase transition (increased by 6.8% and 8.8% respectively after crystallization and phase transition), and the crystallization speed is not good, generally hundreds of ns, which affects the erasing speed and device reliability;
[0005] (2) The higher melting point of GST is 620°C, and the lower crystalline resistance will cause higher power consumption of PRAM memory cells using traditional GST materials as storage media;
[0006] (3) Due to the low crystallization temperature of GST (about 168°C), the data of PRAM memory cells using traditional GST materials as storage media can only be stored for 10 years at 88.9°C, and the data storage life at high temperatures is short

Method used

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  • Zn-sb-se phase change memory film material for phase change memory
  • Zn-sb-se phase change memory film material for phase change memory
  • Zn-sb-se phase change memory film material for phase change memory

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] Embodiment 1: In a magnetron sputtering coating system, a quartz sheet or a silicon oxide sheet is used as a substrate, a ZnSb alloy target is installed in a magnetron DC sputtering target, and a SbSe alloy target is installed in a magnetron radio frequency sputtering target In shooting the target, vacuumize the sputtering chamber of the magnetron sputtering coating system until the vacuum degree in the chamber reaches 2.5×10 -4 Pa, then pass into the sputtering chamber with a volume flow rate of high-purity argon gas of 50ml / min until the air pressure in the sputtering chamber reaches the required initiation pressure of 0.35Pa for sputtering, and then control the sputtering power of the ZnSb alloy target to be 5W, The sputtering power of the SbSe alloy target is 20W, double-target co-sputtering coating at room temperature, after the sputtering thickness is 80nm, the deposited Sb-rich Zn x Sb y Se z Phase-change memory film material ZSS1, where x=5.4, y=48.0, z=46.6, ...

Embodiment 2

[0025] Embodiment 2: Other steps are the same as Embodiment 1, the difference is: in the sputtering process, the sputtering power of the ZnSb alloy target is controlled to be 5W, the sputtering power of the SbSe alloy target is 10W, and the double target is co-sputtered at room temperature Coating, after sputtering with a thickness of 80nm, the deposited Sb-rich Zn x Sb y Se z Phase-change memory film material ZSS2, where x=19.0, y=45.7, z=35.3, that is, the chemical structural formula is Zn 19.0 Sb 45.7 Se 35.3 .

[0026] The prepared thin film material was tested for in-situ resistance performance, and the test results were as follows: figure 1 with figure 2 shown, from figure 1 with figure 2 It can be seen that the performance index of the thin film ZSS2 prepared by the present embodiment is as follows: crystallization temperature T c at 250°C, the crystallization activation energy E a 8.57eV, the highest temperature T for data storage for 10 years 10Y It is 20...

Embodiment 3

[0027] Embodiment 3: Other steps are the same as Embodiment 1, the difference is: in the sputtering process, the sputtering power of the ZnSb alloy target is controlled to be 10W, the sputtering power of the SbSe alloy target is 10W, and the double targets are co-sputtered at room temperature Coating, after sputtering with a thickness of 80nm, the deposited Sb-rich Zn x Sb y Se z Phase-change memory film material ZSS3, where x=24.1, y=50.1, z=25.8, that is, the chemical structural formula is Zn 24.1 Sb 50.1 Se 25.8 .

[0028] The prepared thin film material was tested for in-situ resistance performance, and the test results were as follows: figure 1 with figure 2 shown, from figure 1 with figure 2It can be seen that the performance index of the thin film ZSS3 prepared by the present embodiment is as follows: crystallization temperature T c at 238°C, the crystallization activation energy E a 5.05eV, the maximum temperature T for data storage for 10 years 10Y It is ...

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Abstract

The present invention has disclosed the ZN‑SB‑se phase transformation of the storage film material for phase -changing memory. It is characterized by the phase -changing storage film material as the ZN‑SB‑se compound with a rich SB. Its chemical structure is Zn x SB y SE z Among them: 0 <x <35, 45 <y <55, 20 <z <55, x+y+z = 100; the advantage is that the film material has a nano -second -level high -speed phase change, strong high temperature thermal stability,The obvious resistance difference and better reversible cycle variable ability between the larger amorphous state and the crystal state; the crystalline temperature of the film material ( T c ) It is 216‑250 ° C, crystalline activation energy ( E a ) It is 5.0558.57EV, and the maximum temperature for 10 years is 152.6‑200.2 ° C.

Description

technical field [0001] The invention relates to the technical field of phase-change storage materials, in particular to Zn-Sb-Se phase-change storage film materials used for phase-change storage. Background technique [0002] Phase change memory technology (PRAM) is a new concept storage technology that has emerged in recent years. It uses phase change thin film materials to switch between crystalline and amorphous states under the action of light / electric pulses to realize data writing and erasing. In addition, it is a hot spot in memory research at present, and it is considered to be the most promising next-generation mainstream memory. Compared with some other magnetoresistive memory (MRAM), ferroelectric memory (FeRAM), and resistive variable memory (RRAM) that will replace flash memory in the future, PRAM has greater advantages in size reduction. It not only has fast read and write speed (ns level), high cycle times (>10 12 ), low power consumption and other charac...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C22C30/06C23C14/35C23C14/14H01L45/00
CPCC22C30/06C23C14/14C23C14/35H10N70/235
Inventor 王国祥沈祥徐培鹏吕业刚陈益敏田曼曼李军建戴世勋聂秋华徐铁峰
Owner NINGBO UNIV