A nanocomposite tio 2 ‑sb 2 te phase-change storage film material and preparation method thereof
A phase-change storage and thin-film material technology, applied in metal material coating process, ion implantation plating, coating and other directions, can solve the problems of high threshold voltage, low carrier mobility, small dielectric constant, etc. The effect of large crystalline resistance, good resistance ratio/reflectivity difference, and fast crystallization speed
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Embodiment 1
[0027] In the magnetron sputtering coating system, a quartz sheet or a silicon oxide sheet is used as a substrate, and TiO 2 The alloy target is installed in the magnetron DC sputtering target, and the Sb 2 The Te alloy target is installed in the magnetron radio frequency sputtering target, and the sputtering chamber of the magnetron sputtering coating system is vacuumed until the vacuum degree of the chamber reaches 2.2×10 -4 Pa, and then pass high-purity argon gas with a volume flow rate of 47.6 ml / min into the sputtering chamber until the air pressure in the sputtering chamber reaches the ignition pressure of 0.25 Pa required for sputtering, and then control the TiO 2 The sputtering power of ceramic target is 15 W, Sb 2 The sputtering power of the Te alloy target is 90 W, and the double-target co-sputtering coating is performed at room temperature. After the sputtering thickness is 200 nm, the deposited nanocomposite TiO 2 -Sb 2 Te phase change memory thin film material...
Embodiment 2
[0030] With the above-mentioned embodiment 1, the difference is: in the sputtering process, control the TiO 2 The sputtering power of the ceramic target is 15W, Sb 2 The sputtering power of the Te alloy target is 80 W, and the double-target co-sputtering coating is carried out at room temperature. After the sputtering thickness is 200 nm, the deposited nanocomposite TiO 2 -Sb 2 Te phase change memory thin film material. Where x=3.3, that is, the chemical structural formula is (TiO 2 ) 3.3 (Sb 2 Te) 96.7 .
[0031] The prepared thin film materials were tested by in-situ resistance and atomic force microscopy, and the test results were as follows: figure 1 with figure 2 shown, from figure 1 with figure 2 It can be seen that the performance index of the film prepared in this embodiment is as follows: crystallization temperature T c The temperature is 167 ℃, the crystalline resistance is 899 Ω / □ at 250 ℃, and the roughness is 53.9 nm.
Embodiment 3
[0033] With the above-mentioned embodiment 1, the difference is: in the sputtering process, control the TiO 2 The sputtering power of the ceramic target is 15W, Sb 2 The sputtering power of the Te alloy target is 60 W, and the double-target co-sputtering coating is performed at room temperature. After the sputtering thickness is 200 nm, the deposited nanocomposite TiO 2 -Sb 2 Te phase change memory thin film material. Where x=5.3, that is, the chemical structural formula is (TiO 2 ) 5.3 (Sb 2 Te) 94.7 .
[0034] The prepared thin film materials were tested by in-situ resistance and atomic force microscopy, and the test results were as follows: figure 1 with figure 2 shown, from figure 1 with figure 2 It can be seen that the performance index of the film prepared in this embodiment is as follows: crystallization temperature T c at 176 ℃, the crystalline resistance at 250 ℃ is ~2533 Ω / □, and the roughness is 14.04 nm.
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Abstract
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