Semiconductor device and method for producing same

Abstract

This semiconductor device includes a semiconductor element and a metal buffer layer electrically connected to the semiconductor element. In this semiconductor device, the metal buffer layer and the semiconductor element are connected with each other in such a form that the metal buffer layer and the semiconductor element are in surface contact with each other. Further, the metal buffer layer functions as an external connection terminal used for the mounting onto a secondary mount substrate, and at the same time, also functions as a buffer member that provides an effect of reducing a stress between the secondary mount substrate and the semiconductor element.

Description

technical field [0001] The present invention relates to a semiconductor device and its manufacturing method. More specifically, the present invention relates to a semiconductor device having excellent heat dissipation and high reliability and a method for manufacturing the same. Background technique [0002] In recent years, semiconductors that control large currents have been used in hybrid vehicles that combine gasoline engines and electric motors. In addition, such semiconductors are also used in the high output current control of electric motors along with the spread of electric vehicles that run only with electric motors. [0003] Furthermore, a semiconductor (LED) that emits light as a light source is used in various applications because of its energy saving and long life. For example, LEDs are used in various lighting applications in addition to applications such as backlight sources for display devices (liquid crystal screens), camera flash applications, and automo...

AI Technical Summary

Problems solved by technology

For example, the efficiency of high-efficiency GaN and SiC used in high-output control semiconductors for motors is about 98%, but about 2% becomes heat, which will become a problem in the process of using at high output

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