Electrostatic protection component and manufacturing method thereof
A technology for electrostatic protection and manufacturing methods, which is applied in the direction of electrical components, semiconductor/solid-state device manufacturing, and electric solid-state devices, can solve the problems of increasing the complexity of integrated circuits, occupying area, and manufacturing costs, and achieve the reduction of integrated circuit area and Create Difficulty Effects
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[0024] Please also refer to figure 1 and figure 2 , figure 1 It is a schematic layout diagram of a preferred embodiment of the electrostatic protection component 10 of the present invention; figure 2 yes figure 1 A schematic cross-sectional view of the middle ESD protection component 10 along line II-II. The electrostatic protection device 10 includes at least two N-type metal oxide semiconductors (N-Metal Oxide Semiconductor, NMOS). The two NMOS systems are disposed in the N-type well 13 of the P-type substrate 11 . Each NMOS includes a gate 15, a part of the gate 15 is covered on an insulating layer 111, and another part is covered on a high-voltage gate oxide layer 113, wherein the insulating layer 111 is formed by a general oxide layer manufacturing process. production.
[0025] Each NMOS includes a P+ doping region 17 and a first N+ doping region 19 adjacent to each other on the gate 15 side, wherein the first N+ doping region 19 is the source of the NMOS. A seco...
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