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Diode structure

A diode and terminal structure technology, applied in the direction of electrical components, electric solid devices, circuits, etc., can solve the problems of large leakage, poor reliability, easy to be damaged, etc., and achieve small leakage at high temperature, good pressure resistance and high reliability Effect

Inactive Publication Date: 2015-02-11
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The diode works in the state of electrical breakdown, loses unidirectional conductivity, and is easily damaged
However, GPP structure diode products have large leakage and poor reliability at high temperature

Method used

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  • Diode structure
  • Diode structure
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Embodiment Construction

[0031] The present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, but not to limit the present invention. In addition, it should be noted that, for the convenience of description, only parts related to the present invention are shown in the drawings but not all content.

[0032] exist image 3 A first embodiment of the invention is shown in .

[0033] image 3 is a cross-sectional view of the N-type diode structure according to the first embodiment of the present invention. Such as image 3 Said, the N-type diode structure includes: a substrate 301; an N-type region 302 located on the substrate 301 with an N-type conductivity type; located in the N-type region 302 and having an The P-type region 306 of the P-type conductivity type, the P-type region 306 and the N-type region 302 form a PN j...

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Abstract

A diode structure comprises: a substrate (101); a first region (102) located on the substrate (101) and provided with a first conduction type; a second region (105) located in the first region (102) and provided with a second conduction type opposite to the first conduction type, the second region (105) and the first region (102) forming a PN junction, the surface of the first region (102) being a smooth surface, and the surface of the second region (105) consisting of at least one part of surface and the left smooth surface; and a passivation layer on the smooth surface. By making the surface of the first region (102) formed on the substrate (101) and provided with the first conduction type into a smooth surface, low electric leakage can be achieved at a high temperature, the reliability is high, and voltage withstanding performance is good; in addition, by making at least one part of the surface of the second region (105) formed in the first region (102) and provided with the second conduction type into a rough surface, metallization can be performed by using a mature nickel plating or gold plating process.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, in particular to the technical field of power semiconductor devices, and in particular to a diode structure. Background technique [0002] Diode, also known as crystal diode, is a two-terminal electronic device with unidirectional conductivity. There is a PN junction inside the diode, and two terminals are drawn from this PN junction. The working principle of the diode is: when the applied forward voltage is not greater than the threshold voltage of the diode, the diode is in the cut-off state; otherwise, the diode is in the conduction state; when the applied reverse voltage is not greater than the reverse breakdown voltage, the diode is in the cut-off state ; Otherwise, the reverse current will suddenly increase and the diode will be in a state of electrical breakdown. Diodes work in the state of electrical breakdown, lose their unidirectional conductivity, and are easily damage...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/861H01L29/06
CPCH01L29/34H01L23/3178H01L29/8611H01L2924/0002H01L29/861H01L29/0684
Inventor 何飞梁金
Owner WUXI CHINA RESOURCES HUAJING MICROELECTRONICS