Check patentability & draft patents in minutes with Patsnap Eureka AI!

membrane profile

A surface layer and slope technology, applied in the field of optoelectronic devices, can solve problems such as high leakage devices

Inactive Publication Date: 2018-06-26
CAMBRIDGE DISPLAY TECH LTD
View PDF16 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

A highly conductive HIL, coupled with a short path length between the anode (ITO) surface and the HIL-IL-EL-cathode consistent pinning point, has been shown to lead to highly leaky devices

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • membrane profile
  • membrane profile
  • membrane profile

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0078] Embodiments generally provide single-bank architectures, eg, with longer path lengths, thereby reducing leakage current. For OLEDs, this path length can be between the anode surface (eg, ITO) and the HIL-IL-EL consistent fluidic pinning point. These longer path lengths along the highly resistive HIL can create highly resistive paths for any potential parasitic leakage currents and / or create non-emitting fringe device diodes. This bank structure has proven to be an improvement in OLED lifetime stability.

[0079]Various bank fabrication processes for such an embodiment are contemplated in the following description. For example: (i) hydrophobic banks patterned with a helper layer and partially reactive ion etching (RIE) developed; (ii) unpatterned hydrophobic banks with partially exposed pixel edges for RIE masking layer; (iii) Dual development process; (iv) dual mask process with single patterning layer; (v) single mask partial transmission (leakage) process with singl...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention relates to film profiles. An optoelectronic device comprising a first electrode, a second electrode, a semiconducting material positioned between the first electrode and the second electrode, and an electrically insulating bank structure defining a well surrounding a surface layer region comprising said first electrode. An electrode, the device having an optical cavity, comprising: a fully light reflective layer; a partially light reflective layer; and a layer structure comprising at least one solution processable layer comprising a semiconducting material and positioned between the fully light reflective layer and the partially light reflective layer between layers. The surface layer region includes a reflective layer and the solution processable layer is located on the surface layer region and on the first slope and the second slope of the sidewall. The arrangement of the fully light reflecting layer and the partially light reflecting layer provides a resonant cavity for light generated in the layer structure, and the side walls have a first slope extending from the surface layer region and a second steeper slope extending from the first slope.

Description

technical field [0001] The present invention generally relates to optoelectronic devices comprising a substrate having a surface layer and bank structures defining wells on said surface layer, and to methods of constructing optoelectronic devices comprising a substrate having a surface layer and a bank structure on said surface layer A well-defining bank structure on a layer. Background technique [0002] Methods involving the deposition of active components from solution (solution processing) for the manufacture of electronic devices have been extensively investigated. If the active ingredient is deposited from solution, the active ingredient is preferably contained within the desired area of ​​the substrate. This can be achieved by providing a substrate comprising a patterned bank layer that defines wells in which the active ingredient can be deposited from solution. The well contains the solution as it dries such that the active ingredient remains in the area of ​​the s...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/52H01L51/50H01L51/56
CPCH10K77/10H10K50/00H10K50/80H10K50/805H10K71/00Y02E10/549Y02P70/50H10K30/80H10K50/856
Inventor G·安德森G·威廉姆斯D·福赛西L·伯姆伯尔
Owner CAMBRIDGE DISPLAY TECH LTD
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com