Operating method for obtaining multiple transformation modes of resistance transformation memorizer
A resistance conversion and operation method technology, applied in static memory, digital memory information, information storage, etc., can solve problems such as complex methods and no practical value, and achieve the effect of simple and practical methods
Inactive Publication Date: 2015-03-04
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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Problems solved by technology
[0004] According to related reports, different transition modes of the device can be realized by changing the device structure, electrode or dielectric layer material, or ambient temperature, etc. However, these methods are too complicated and do not have much practical value
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Embodiment
[0033] In this embodiment, an oxidized 2-inch silicon wafer is used, the active electrode is silver (Ag), the inert electrode is platinum (Pt), and the dielectric layer is silicon oxide sputtered by ion beam.
[0034] The 2-inch wafers were subjected to the standard cleaning process described above to remove surface oil and metal contamination.
[0035] The cleaned silicon wafer is oxidized in a high-temperature oxidation furnace, and an insulating silicon oxide is formed on the surface as a substrate dielectric layer with a thickness of about 100 nanometers.
[0036]First, the metal platinum with a thickness of 80 nanometers is evaporated by electron beam on the substrate, and the 9920 photoresist is spin-coated on the substrate with the grown platinum at 7000 rpm, spin coating for one minute, the thickness is about 1.2 microns, and the temperature is 85 ℃. The vacuum exposure mode was selected for exposure of the board for 4.5 minutes, and the exposure time was 3.5 seconds. ...
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The invention discloses an operating method for obtaining multiple transformation modes of a resistance transformation memorizer. The operating method comprises the following steps: selecting a component; performing electric excitation on the selected component for the first time; performing electric operation on the component so as to obtain the multiple transformation modes of the resistance transformation memorizer. In the operating method, by selecting a resistance transformation memorizer component based on a metal conductive filament mechanism and by adjusting limiting current during the electric excitation for the first time, subsequent different resistance transformation modes can be realized; the operating method is simple and practical; change of the transformation mode can be obtained in the same component, thus achieving operations in multiple transformation modes; indirect evidence of influence of the limiting current during the electric excitation for the first time on a conductive filament channel can be obtained; the operating method has a profound significance for deeply understanding a mechanism of resistance change of the resistance transformation memorizer based on the metal filament mechanism.
Description
technical field [0001] The present invention relates to the technical field of nano-electronic devices and nano-fabrication, and in particular, to an operation method for obtaining a multi-transition mode of a resistance transition memory. Background technique [0002] In order to meet the needs of big data, in recent years, the storage density of memory has become higher and higher, and the device area has become smaller and smaller. We know that the mainstream non-volatile memory on the market is flash memory devices. Due to the further reduction of device size, it is close to the physical limit of flash memory devices. If it continues to shrink, the reliability of the device will be greatly affected, that is to say Based on the device structure and working principle of the current flash memory device, it is difficult to greatly improve the storage density of the flash memory device, which makes the acquisition of high-density storage devices into a predicament. [0003] ...
Claims
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IPC IPC(8): G11C13/00
Inventor 孙海涛刘琦吕杭炳龙世兵刘明
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI