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Silicon substrate defect detection method

A defect detection, silicon substrate technology, applied in the direction of semiconductor/solid-state device testing/measurement, electrical components, semiconductor/solid-state device manufacturing, etc., can solve problems such as deviation, and achieve the effect of simple method, easy operation and fast detection

Inactive Publication Date: 2015-03-04
CHONGQING XUXING CHEM
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in actual crystals, due to the influence of crystal formation conditions, thermal motion of atoms and other conditions, the arrangement of atoms cannot be so complete and regular, and there are often regions that deviate from the ideal crystal structure.

Method used

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  • Silicon substrate defect detection method

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] Divide the area to be analyzed on the silicon wafer into samples with a width of 2 cm and a length of 5 cm with a diamond knife; pour an appropriate amount of HF with a mass fraction of 30% into a plastic measuring cup, and place it in an ultrasonic cleaner for 15 minutes; The sample was placed in a measuring cup filled with HF acid, and subjected to ultrasonic corrosion for 1 min; during the corrosion process, the sample was prevented from being exposed to air and human contact; the sample after ultrasonic corrosion was rinsed with water, and dried with a nitrogen gun; Samples were inspected for defects.

Embodiment 2

[0033] Divide the area to be analyzed on the silicon wafer into samples with a width of 3 cm and a length of 5 cm with a diamond knife; pour an appropriate amount of HF with a mass fraction of 40% into a plastic measuring cup, and place it in an ultrasonic cleaner for 20 min; The sample was placed in a measuring cup filled with HF acid, and subjected to ultrasonic corrosion for 3 minutes; during the corrosion process, the sample was prevented from being exposed to air and human contact; the sample after ultrasonic corrosion was rinsed with water, and dried with a nitrogen gun; Samples were inspected for defects.

Embodiment 3

[0035] Divide the area to be analyzed on the silicon wafer into samples with a width of 4 cm and a length of 5 cm with a diamond knife; pour an appropriate amount of HF with a mass fraction of 50% into a plastic measuring cup, and place it in an ultrasonic cleaner for 30 minutes; The sample was placed in a measuring cup filled with HF acid, and subjected to ultrasonic corrosion for 5 minutes; during the corrosion process, the sample was prevented from being exposed to air and human contact; the sample after ultrasonic corrosion was rinsed with water, and dried with a nitrogen gun; Samples were inspected for defects.

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Abstract

The invention relates to a silicon substrate defect detection method, which comprises the following steps: a region which needs to be analyzed on a silicon wafer is divided into a sample of a certain size by using a diamond knife; a proper HF is poured in a plastic measuring cup and the cup is put in an ultrasonic cleaning machine for shock; the sample is put in the measuring cup containing HF acid for ultrasonic corrosion; the sample after ultrasonic corrosion is washed by clean water and a nitrogen gun is used for blowing dry; and a scanning electron microscope is used for carrying out defect observation on the sample. The method of the invention is simple, easy to operate, quick to detect and effective.

Description

technical field [0001] The invention relates to the technical field of semiconductor preparation and defect detection, in particular to a silicon substrate defect detection method. Background technique [0002] Now the semiconductor industry is developing very rapidly, and the competition among semiconductor factories is becoming more and more fierce. For better development, all companies are striving to pursue the quality and yield of devices. One of the most important factors affecting the yield and performance of semiconductor devices is the crystal defect of the substrate material. Therefore, the detection of crystal defects has been paid more and more attention. The main purpose of crystal defect detection is to judge whether there are defects through experiments, and to adjust the process production according to the generated defects, so as to minimize the probability of crystal defects and improve the yield of products. [0003] In an ideal complete crystal, atoms ...

Claims

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Application Information

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IPC IPC(8): H01L21/66H01L21/02
CPCH01L22/12
Inventor 周祖渝
Owner CHONGQING XUXING CHEM