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A kind of flip-chip structure light-emitting diode and its manufacturing method

A light-emitting diode and flip-chip technology, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of high refractive index of epitaxial materials, inability to directly output light, and small light output angle.

Active Publication Date: 2017-05-03
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The design of the graphics substrate is based on the front-loading structure. Due to the high refractive index of the epitaxial material itself, the light output angle is small, and most of the light cannot be directly output.

Method used

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  • A kind of flip-chip structure light-emitting diode and its manufacturing method
  • A kind of flip-chip structure light-emitting diode and its manufacturing method
  • A kind of flip-chip structure light-emitting diode and its manufacturing method

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Embodiment Construction

[0015] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0016] The invention provides a light-emitting diode with an inverted structure, which includes: a substrate, a buffer layer, an n-type contact layer, an active light-emitting layer, an electron blocking layer, and a p-type contact layer; wherein, the substrate and the active light-emitting layer There is a porous (or columnar) nanostructure layer between them.

[0017] Optionally, the nanostructure layer can be made on the surface of the substrate, or inside the buffer layer or at the interface between the buffer layer and the n-type contact layer, or inside the n-type contact layer or between the n-type contact layer and the active light-emitting layer The interface between them can also be made inside the active light-...

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Abstract

The invention discloses an inversion LED and a production method thereof. The LED comprises a substrate, a buffer layer, an n-type contact layer, an active light emitting layer, an electronic barrier layer and a p-type contact layer. A porous or columnar nanometer structure layer is arranged between the substrate and the active light emitting layer. The LED is used for the production of inversion chips, and the transparent nanometer structure layer is produced between the substrate and the active light emitting layer.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a flip-chip structure light-emitting diode with high light extraction efficiency and a manufacturing method thereof. Background technique [0002] At present, red, green and blue LEDs including other colors have become a research hotspot in the optoelectronics industry because of their broad application market. The most important parameter for evaluating LEDs is luminous efficiency, and the key factors affecting LED luminous efficiency include internal quantum efficiency and light extraction efficiency. In order to improve the internal quantum efficiency, the current research hotspots include the selection and preparation of the substrate, the improvement of the epitaxial quality and the structure optimization and so on. At present, the commonly used method is to use substrate patterning treatment, on the one hand to improve the quality of epitaxy, and on the other hand t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/02H01L33/00
CPCH01L33/0075H01L33/0083H01L33/02H01L33/48H01L2933/0033
Inventor 马平吴冬雪王军喜李晋闽
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI