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A kind of preparation method of tellurium bismuth based thermoelectric material

A technology of thermoelectric materials, tellurium bismuth, applied in the manufacture/processing of thermoelectric devices, thermoelectric device node lead-out materials, etc., can solve the problems of poor thermoelectric performance and inability to have good thermoelectric performance and mechanical performance at the same time, and achieve cost Low cost, good processability and short production cycle

Active Publication Date: 2017-11-28
广东先导稀贵金属材料有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Although the tellurium-bismuth-based thermoelectric material prepared by the method provided by the prior art has good mechanical properties, its thermoelectric properties are poor
Therefore, the tellurium-bismuth-based thermoelectric materials provided by the prior art cannot have good thermoelectric properties and mechanical properties at the same time

Method used

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  • A kind of preparation method of tellurium bismuth based thermoelectric material
  • A kind of preparation method of tellurium bismuth based thermoelectric material

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preparation example Construction

[0038] The invention provides a preparation method of tellurium-bismuth-based thermoelectric material, comprising:

[0039] Hot pressing the tellurium-bismuth-based crystal material to obtain the tellurium-bismuth-based thermoelectric material;

[0040] The tellurium-bismuth-based crystal material has the general formula shown in formula I:

[0041] Te 3 Bi x Sb 2-x Formula I;

[0042] In formula I, 0.4≤x≤0.6;

[0043] The grain size of the tellurium-bismuth-based crystal material is 50 microns to 150 microns;

[0044] The temperature of the hot pressing is 320° C. to 580° C., and the holding time of the hot pressing is 5 minutes to 180 minutes.

[0045] Using the hot pressing process provided by the invention to have Te 3 Bi x Sb 2-x The tellurium-bismuth-based crystal material of the general formula is subjected to hot pressing, which can inhibit the growth of grains in the tellurium-bismuth-based crystal material, so that the tellurium-bismuth-based thermoelectric ...

Embodiment 1

[0093] Elemental tellurium with a purity of 4N, elemental bismuth with a purity of 4N, and elemental antimony with a purity of 4N are compounded according to a molar ratio of 3:0.4:1.6, and the total mass of the elemental tellurium, elemental bismuth, and elemental antimony is 1Kg .

[0094] The above-mentioned elemental tellurium, elemental bismuth and elemental antimony are packed into a clean quartz tube, and the quartz tube is evacuated to 10 - 2 Sealing after Pa; heating the quartz tube at 780°C for 3 hours, water quenching, and cooling to 25°C to obtain tellurium-bismuth-based crystal material;

[0095] The bismuth telluride-based crystal material is crushed and sieved in a glove box to obtain a bismuth telluride-based powder material, and the powder with a mass percentage of 90% of the bismuth telluride-based powder material has a passing particle size of 120 microns of sieve holes.

[0096] The tellurium-bismuth-based powder material is packed into figure 1 In the ...

Embodiment 2

[0102] Elemental tellurium with a purity of 4N, elemental bismuth with a purity of 4N, and elemental antimony with a purity of 4N are compounded according to a molar ratio of 3:0.5:1.5, and the total mass of the elemental tellurium, elemental bismuth, and elemental antimony is 1Kg .

[0103] The above-mentioned elemental tellurium, elemental bismuth and elemental antimony are packed into a clean quartz tube, and the quartz tube is evacuated to 10 - 2 Sealing after Pa; heating the quartz tube at 600°C for 8 hours, water quenching, and cooling to 25°C to obtain tellurium-bismuth-based crystal material;

[0104] The tellurium-bismuth-based crystal material is crushed and sieved in a glove box to obtain a tellurium-bismuth-based powder material, and the mass percentage of the tellurium-bismuth-based powder material is 90% by mass, and the passing particle size is 87 microns of sieve holes.

[0105] The tellurium-bismuth-based powder material is packed into figure 1 In the hot ...

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Abstract

The invention provides a preparation method of a tellurium-bismuth-based thermoelectric material, comprising: hot-pressing a tellurium-bismuth-based crystal material to obtain a tellurium-bismuth-based thermoelectric material; the tellurium-bismuth-based crystal material has a general formula of Te3BixSb2‑x, 0.4 ≤x≤0.6; the grain size of the tellurium-bismuth-based crystal material is 50 microns to 150 microns; the temperature of the hot pressing is 320° C. to 580° C., and the holding time of the hot pressing is 5 minutes to 180 minutes. The invention provides a hot pressing mold, comprising: an upper die head, a die cavity, and a lower die head; the upper die head and the lower die head can be embedded into the inside of the die cavity; device; a heating device arranged on said mold cavity. The tellurium-bismuth-based crystal material having the general formula Te3BixSb2-x is hot-pressed by adopting the hot-pressing process provided by the invention, and the prepared tellurium-bismuth-based thermoelectric material has good mechanical properties and thermoelectric properties at the same time.

Description

technical field [0001] The invention relates to the technical field of thermoelectric materials, in particular to a preparation method of tellurium-bismuth-based thermoelectric materials. Background technique [0002] Thermoelectric materials are functional materials that can realize direct mutual conversion between thermal energy and electrical energy. Devices made of thermoelectric materials have the advantages of small size, no noise, no pollution, no moving parts, etc., and have extremely important application prospects in thermoelectric cooling and thermoelectric power generation. At present, thermoelectric materials have been widely used in civilian industries and high-tech fields, such as small refrigerators, drinking fountains, artificial satellites, spacecraft, high-performance receivers and sensors, etc. [0003] The thermoelectric properties of thermoelectric materials are characterized by thermoelectric figure of merit ZT, ZT=S 2 σT / κ (S is the Seebeck coeffici...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L35/16H01L35/34C22C29/00C22F1/16H10N10/852H10N10/01
Inventor 高远朱刘李坚李德全蒋和平
Owner 广东先导稀贵金属材料有限公司