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A kind of preparation method of subwavelength silicon nanowire array

A silicon nanowire array and sub-wavelength technology, which is applied in the field of nanomaterials, achieves the effects of reducing production costs, great application prospects, and good anti-reflection characteristics

Active Publication Date: 2017-10-27
KUNMING UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, although there have been reports on the preparation of silicon nanowire arrays by metal nano-assisted etching, the raw materials for the preparation are still mainly single crystal silicon wafers.

Method used

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  • A kind of preparation method of subwavelength silicon nanowire array
  • A kind of preparation method of subwavelength silicon nanowire array
  • A kind of preparation method of subwavelength silicon nanowire array

Examples

Experimental program
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Embodiment 1

[0027] The preparation method of the sub-wavelength silicon nanowire array described in this embodiment specifically comprises the following steps:

[0028] (1) Set the size to 156×156mm 2 1. Commercial solar-grade polysilicon wafers with doping type p-type, resistance 1Ω, and thickness 220 μm were ultrasonically cleaned with acetone, toluene, ethanol, and deionized water for 10 minutes;

[0029] (2) put in H 2 SO 4 and H 2 o 2Soak for 1 minute in a solution with a volume ratio of 3:1, then soak for 10 minutes in a hydrofluoric acid solution with a concentration of 10 wt%, take it out and rinse it with a large amount of deionized water for later use;

[0030] (3) Prepare 500ml HF / AgNO 3 Etching solution, HF and AgNO 3 The concentrations are 2.3mol / L and 5mol / L respectively; put the cleaned polysilicon wafer into the etching solution, move it to a dark room and let it stand for 50 minutes to obtain a silicon nanowire array with metal ions;

[0031] (4) Take out the silic...

Embodiment 2

[0034] The preparation method of the sub-wavelength silicon nanowire array described in this embodiment specifically comprises the following steps:

[0035] (1) Set the size to 156×156mm 2 1. A commercial solar-grade polysilicon wafer with a doping type of p-type, a resistance of 2Ω, and a thickness of 210 μm was ultrasonically cleaned with acetone, toluene, ethanol, and deionized water for 10 minutes;

[0036] (2) put in H 2 SO 4 and H 2 o 2 Soak it in a solution with a volume ratio of 3:1 for 10 minutes, then soak it in a hydrofluoric acid solution with a concentration of 0.1wt% for 120 minutes, take it out and wash it with a large amount of deionized water for later use;

[0037] (3) Prepare 500ml HF / H 2 PtCl 6 Etching solution, HF and H 2 PtCl 6 The concentrations are 15mol / L and 5mol / L respectively; put the cleaned polysilicon wafer into the etching solution and let it stand for 5min to obtain a silicon nanowire array with metal ions;

[0038] (4) Take out the si...

Embodiment 3

[0041] The preparation method of the sub-wavelength silicon nanowire array described in this embodiment specifically comprises the following steps:

[0042] (1) Set the size to 156×156mm 2 1. A commercial solar-grade polysilicon wafer with a doping type of p-type, a resistance of 3Ω, and a thickness of 180 μm was ultrasonically cleaned with acetone, toluene, ethanol, and deionized water for 10 minutes;

[0043] (2) put in H 2 SO 4 and H 2 o 2 Soak in a solution with a volume ratio of 3:1 for 2 minutes, then soak in a hydrofluoric acid solution with a concentration of 5wt% for 20 minutes, take it out and wash it with a large amount of deionized water for subsequent use;

[0044] (3) Prepare 500ml HF / KAuCl 4 Etching solution, HF and KAuCl 4 The concentrations are 0.1mol / L and 10mol / L respectively; put the cleaned polysilicon wafer into the etching solution, then move it to the dark room and let it stand for 600min;

[0045] (4) After that, take out the silicon nanowire ar...

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Abstract

The invention discloses a method for preparing a subwavelength silicon nanowire array, belonging to the technical field of nanometer materials. The present invention uses cheap commercial polycrystalline silicon wafers as raw materials, and utilizes the catalysis of nanometer metal particles (Ag, Pd, Au, Pt, Cu) to prepare large-scale (156×156mm2) Silicon nanowire arrays with a single crystal structure can efficiently obtain large-scale and thinner (sub-wavelength structure) nanowire arrays after secondary etching of silicon nanowire arrays; through adjusting the size of metal nanoparticles, hydrofluoric acid Concentration, etching time, lye concentration and other parameters to realize the preparation of silicon nanowire arrays with different structures; the large-scale silicon nanowire arrays with subwavelength structure obtained in the present invention show good anti-reflection characteristics for light, which makes silicon Nanowires also show promising application prospects in the field of solar photovoltaics.

Description

technical field [0001] The invention relates to a preparation method of a subwavelength silicon nanowire array, belonging to the technical field of nanometer materials. Background technique [0002] In recent years, as a new type of semiconductor material, silicon nanowires have unique properties in light, electricity, heat, magnetism and catalytic reactions due to their large specific surface area, quantum confinement effect, and surface effect. Due to their physical and chemical properties, they have shown very important application potential in the fields of photoluminescence, large-scale integrated circuits, single electronic devices, and nanosensors. [0003] According to the growth direction of silicon nanowires, the preparation methods are generally divided into two types: "bottom-up" and "top-down". "Bottom-up" refers to starting from the atomic and molecular level, using catalysts to catalyze the growth, and controlling the structure, composition and size of the ma...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02B81C1/00H01L31/0236
CPCY02E10/50
Inventor 马文会李绍元周阳魏奎先于洁杨斌戴永年
Owner KUNMING UNIV OF SCI & TECH