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Capacitive pressure sensor and forming method thereof

A pressure sensor, capacitive technology, applied in the field of micro-electromechanical, can solve the problem of large surface area of ​​semiconductor substrate, and achieve the effect of saving area, improving integration and reducing surface area

Active Publication Date: 2015-03-18
SEMICON MFG INT (SHANGHAI) CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] However, the existing capacitive pressure sensor occupies a large surface area of ​​the semiconductor substrate

Method used

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  • Capacitive pressure sensor and forming method thereof
  • Capacitive pressure sensor and forming method thereof
  • Capacitive pressure sensor and forming method thereof

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Experimental program
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Embodiment Construction

[0035] Existing capacitive pressure sensors use plate capacitors as sensing elements, refer to figure 1 , the plate capacitor made by MEMS technology includes a doped region 104 (lower electrode), a diaphragm 103 (upper electrode) opposite to the doped region 104, and a cavity 103 (dielectric) between the doped region 104 and the diaphragm 103 .

[0036]Sensitivity is an important index to measure the performance of a capacitive pressure sensor. The area of ​​the diaphragm 103 (upper electrode) or the area S between the diaphragm 103 and the doped region 104 (lower electrode) is a parameter that has an important influence on the sensitivity. Generally speaking, for the diaphragm 103 with the same thickness, the larger the area of ​​the diaphragm 103 (upper electrode), the larger the area of ​​the pressure sensing surface, and the more sensitive the diaphragm 103 is to sensing pressure. The diaphragm 103 and the doped region The change of 104 distance will be more sensitive, t...

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Abstract

Provided are a capacitive pressure sensor and a forming method thereof. The capacitive pressure sensor comprises a substrate, a diaphragm covering the substrate and an etching hole, a first electrode and a second electrode which are opposite on two ends of the raised diaphragm, and a sealing layer on the back surface of the substrate. The substrate is provided with the etching hole which passes through the substrate. The part of the diaphragm on the etching hole is raised upward. A third cavity is between the upward raised diaphragm and the substrate. The third cavity and the etching hole form a second cavity. A first cavity is between the first electrode and the second electrode. The sealing layer seals the opening on the lower end of the second cavity. The area taken by the capacitive pressure sensor on the surface of the substrate is relatively small, so that integration level of a device is improved.

Description

technical field [0001] The invention relates to the micro-electromechanical field (MEMS), in particular to a capacitive pressure sensor and a forming method thereof. Background technique [0002] At present, the types of pressure sensors mainly include piezoresistive, piezoelectric, capacitive, potentiometer, inductive bridge, strain gauge and so on. Among them, the capacitive pressure sensor has the advantages of high sensitivity and is not easily affected by the external environment, and has gradually attracted attention in the market. [0003] Due to the limitations of traditional pressure sensors such as large size, complicated manufacturing process and inconvenient operation. MEMS (Micro-Electro-Mechanical Systems, MEMS) technology is widely used in the production of pressure sensors. The pressure sensor made by MEMS technology has the advantages of miniaturization, mass production, low cost, high precision, etc., and the pressure sensor and control circuit can be int...

Claims

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Application Information

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IPC IPC(8): G01L1/14G01L9/12
Inventor 何其暘
Owner SEMICON MFG INT (SHANGHAI) CORP