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A method and device for improving light-induced attenuation of crystalline silicon solar cell components

A technology of solar cells and light-induced attenuation, which is applied in the direction of electrical components, semiconductor devices, circuits, etc., can solve problems such as light-induced attenuation, achieve the effect of reducing and suppressing light-induced attenuation, simple method, and overcome cost investment

Active Publication Date: 2016-09-28
HENGDIAN GRP DMEGC MAGNETICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this method has not yet been realized in industrialization. Moreover, packaging processes such as welding and lamination are required in the process of component packaging after cell pretreatment. Reactivation of boron-oxygen bonds, leading to risk of photodegradation

Method used

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  • A method and device for improving light-induced attenuation of crystalline silicon solar cell components
  • A method and device for improving light-induced attenuation of crystalline silicon solar cell components

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] 1. Cell preparation:

[0037] (1) After the silicon wafers are sorted, perform rough polishing in an alkaline solution (NaOH or KOH solution) to remove impurities and damaged layers;

[0038] (2) Alkaline solution (NaOH or KOH solution) or acidic solution (HF+HNO 3) after velvet making, wash, dry, and the velvet surface size is within 5um;

[0039] (3) Perform high-temperature phosphorus diffusion in a diffusion furnace to form a pn junction, plasma etching to remove the edge junction and secondary cleaning to remove PSG, and the diffusion square resistance is 80-120ohm / squ;

[0040] (4) Depositing the front passivation layer / anti-reflection layer, this step is one of the key processes of the present invention. First, using PECVD (through SiH 4 and NH 3 ) Deposit a layer of SiNx on the emission region, the film thickness is 65nm, and the refractive index is 2.0-2.1; then, deposit SiOxNy film on the SiNx film (through SiH 4 , NH 3 and N 2 O), film thickness is 15n...

Embodiment 2

[0048] 1. Cell preparation:

[0049] PECVD (through SiH 4 and NH 3 ) Deposit a layer of SiNx on the emission region, the film thickness is 70nm, and the refractive index is 2.0-2.1; then, deposit SiOxNy film on the SiNx film (through SiH 4 , NH 3 and N 2 (2), the film thickness is 10nm, and the refractive index is 1.8-1.9; other processes are the same as in Embodiment 1.

[0050] 2. Component packaging: the same as in the first embodiment.

Embodiment 3

[0052] 1. Cell preparation:

[0053] PECVD (through SiH 4 and NH 3 ) Deposit a layer of SiNx on the emission region, the film thickness is 60nm, and the refractive index is 2.0-2.1; then, deposit SiOxNy film on the SiNx film (through SiH 4 , NH 3 and N 2 (2), the film thickness is 20nm, and the refractive index is 1.8-1.9; other processes are the same as in Embodiment 1.

[0054] 2. Component packaging: the same as in the first embodiment.

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Abstract

The invention discloses a method and a device for improving light degradation of a crystalline silicon solar cell module. The method improves and optimizes key technologies in a cell piece manufacturing process and key technologies in a module packaging process, and the specific operation steps are as following: A, manufacturing a cell piece: the key points being improving and optimizing a PECVD coating technology, and through controlling SiNx and SiOxNy deposition reaction, improving hydrogen content of a SiNx film; B, and module packaging: key points being to perform a forward bias preprocessing on the cell piece under a certain temperature while laminating the module. Beneficial effects of the method and the device are that light degradation of a crystalline silicon solar cell module is reduced and restrained, a problem that actual power and nominal power are not consistent caused by the light degradation is overcome, the method realizes industrialization popularization in a simple manner, and overcomes cost investment caused by a light source system, and the method and the device are economical and feasible.

Description

technical field [0001] The invention relates to the related technical field of solar cell components, in particular to a method and device for improving light-induced attenuation of crystalline silicon solar cell components. Background technique [0002] Most of the crystalline silicon solar cell components are composed of 60 or 72 crystalline silicon solar cells connected in series. After the process preparation is completed, cell sorting, single welding and string welding are carried out, and then the cells, glass, EVA and back sheet are laid and laminated according to a certain level, and the preparation of the module is completed after curing. Crystalline silicon solar cells are currently produced on a large scale using boron-doped P-type silicon wafers. Due to the existence of boron-oxygen bonds and other recombination centers, the cells or modules have an initial power attenuation process after being illuminated. In severe cases, the power attenuation more than 3%. ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18
CPCH01L31/1804Y02E10/547Y02P70/50
Inventor 陈健生董方包大新赵峰徐君
Owner HENGDIAN GRP DMEGC MAGNETICS CO LTD
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