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A method for suppressing light-induced attenuation of p-type perc solar cells

A technology of solar cells and light-induced attenuation, which is applied in the direction of circuits, photovoltaic power generation, electrical components, etc., can solve the problems that the technology cannot be popularized and implemented, and achieve the effect of solving the problem of light-induced attenuation, good compatibility, and suppressing light-induced attenuation

Active Publication Date: 2017-12-12
NANCHANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, various technologies cannot be popularized and implemented due to reasons such as cost and technical difficulty.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0015] The p-type PERC solar cell combined with the features of the present invention can be realized through the following specific technical solutions.

[0016] (1) Texture cleaning of p-type silicon wafers.

[0017] (2) A silicon oxide layer heavily doped with boron is deposited on the back of the silicon wafer by PECVD method.

[0018] (3) The phosphorus oxychloride on the front side of the silicon wafer is diffused on one side, and the boron diffusion on the back side is completed at the same time.

[0019] (4) Remove the oxide layer on the front and back of the silicon wafer, and perform edge cutting and other treatments.

[0020] (5) Preparation of aluminum oxide and silicon nitride layers on the back of the silicon wafer.

[0021] (6) Preparation of silicon nitride anti-reflection layer on the front side of the silicon wafer.

[0022] (7) Laser opening on the back of the silicon wafer, aluminum paste printing and drying.

[0023] (8) Print and dry the grid lines on...

Embodiment 2

[0027] The p-type PERC solar cell combined with the features of the present invention can be realized through the following specific technical solutions.

[0028] (1) Texture cleaning of p-type silicon wafers.

[0029] (2) A silicon oxide layer heavily doped with boron is deposited on the back of the silicon wafer by magnetron sputtering.

[0030] (3) The phosphorus oxychloride on the front side of the silicon wafer is diffused on one side, and the boron diffusion on the back side is completed at the same time.

[0031] (4) Remove the oxide layer on the front and back of the silicon wafer, and perform edge cutting and other treatments.

[0032] (5) Preparation of aluminum oxide and silicon nitride layers on the back of the silicon wafer.

[0033] (6) Preparation of silicon nitride anti-reflection layer on the front side of the silicon wafer.

[0034] (7) Laser opening on the back of the silicon wafer, aluminum paste printing and drying.

[0035] (8) Print and dry the grid ...

Embodiment 3

[0039] The p-type PERC solar cell combined with the features of the present invention can be realized through the following specific technical solutions.

[0040] (1) Texture cleaning of p-type silicon wafers.

[0041] (2) Single-sided diffusion of phosphorus oxychloride on the front side of the silicon wafer.

[0042] (3) The phosphosilicate glass layer is removed from the silicon wafer, and the edges are etched and the back is polished.

[0043] (4) Boron ion implantation on the back side, and high temperature annealing to restore the crystal lattice, and re-cleaning of the silicon wafer.

[0044] (5) Preparation of aluminum oxide and silicon nitride layers on the back of the silicon wafer.

[0045] (6) Preparation of silicon nitride anti-reflection layer on the front side of the silicon wafer.

[0046] (7) Laser opening on the back of the silicon wafer, aluminum paste printing and drying.

[0047] (8) Print and dry the grid lines on the front side of the silicon wafer. ...

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Abstract

The invention discloses a method for inhibiting the light degradation of a p-type PERC solar cell, and the method is characterized in that the a heavily-doped p-type crystalline silicon layer is inserted into a p-type silicon wafer and an aluminium oxide passivation layer of a PERC solar cell. The method can effectively inhibit the light degradation of the p-type PERC solar cell, and improves the conversion efficiency of the solar cell because of the field passivation effect. The proposed technical route is well compatible with a conventional production line.

Description

technical field [0001] The invention belongs to the field of solar cells and semiconductor devices. Device design and fabrication technology related to solar cells. Background technique [0002] The large light-induced attenuation of P-type PERC (passivated emitter and rear contacts, PERC) solar cells has become a bottleneck limiting its popularization and application at present, and its attenuation is far greater than that of p-type all-aluminum back-field silicon solar cells. Inventing a method that can effectively suppress its light-induced attenuation has become the key to improving the performance of PERC cells. At present, the more effective methods are: from the perspective of raw materials, changing the doping element in silicon wafers from boron to gallium can completely eliminate light-induced attenuation; Heat treatment or photothermal treatment can partially suppress light-induced attenuation. However, various technologies cannot be popularized and implemented...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18
CPCH01L31/1804Y02E10/547Y02P70/50
Inventor 黄海宾周浪岳之浩高超
Owner NANCHANG UNIV
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