Semiconductor device

A semiconductor and conductive layer technology, applied in the direction of semiconductor devices, transistors, electrical components, etc., can solve the problems of increasing production costs and wasting space on the substrate A20, and achieve the effects of gradually reducing production costs, increasing current, and reducing invalid areas

Active Publication Date: 2017-08-25
ANCORA SEMICON INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Electrons hardly flow through the figure 2 The invalid area Z1 in the substrate A20 results in a waste of space on the substrate A20, and the same number of field effect transistors A20 need to be arranged on a substrate A20 with a larger area to output more current, thereby increasing the production cost.

Method used

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  • Semiconductor device
  • Semiconductor device
  • Semiconductor device

Examples

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Embodiment Construction

[0056] image 3 It is a cross-sectional view of the semiconductor device 1 of the present invention. Figure 4 for image 3 Cutaway view of the AA section. The semiconductor device 1 can be a switching device, and can be applied in a high-power power supply.

[0057] The semiconductor device 1 includes a substrate 10 , a plurality of transistors 20 , a first conductive layer 30 , and a second conductive layer 40 . The substrate 10 can be a wafer, and its material can be silicon. The transistor 20 may be a field effect transistor 20 (Field Effect Transistor, FET) formed on the substrate 10 and arranged in an array on the substrate 10 .

[0058] In one embodiment of the present invention, the transistor 20 is a normally-on transistor, which includes a buffer layer 21, an active layer 22, a first electrode 23, a second electrode 24, a gate a gate electrode 25 , a protective layer 26 , and an insulating layer 27 . The buffer layer 21 is stacked on the substrate 10 , and the ...

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Abstract

The invention discloses a semiconductor device, which includes a substrate and a plurality of transistors arrayed on the substrate. The transistor includes a first electrode, multiple second electrodes, and a gate electrode. The second electrodes are arranged around the first electrodes. The gate electrode is a ring structure and is located between the first electrode and the second electrode. The first electrode and the gate electrode are circular or polygonal, and the side of the second electrode corresponds to the shape of the gate electrode. The semiconductor device of the present invention can increase the output current of the transistor, and can reduce the invalid area on the substrate, thereby reducing the manufacturing cost.

Description

technical field [0001] The present invention relates to a semiconductor device, and more particularly to a semiconductor device having a transistor. Background technique [0002] In order to increase the switching speed of the switch, the current power supply uses a field effect transistor as a switching device. In addition, the field effect transistor also has the advantage of low resistance, which can improve the power supply efficiency of the power supply. [0003] Such as figure 1 As shown, the known field effect transistors A10 are arranged on a substrate A20, and the field effect transistors A10 are connected in parallel with each other so as to output a larger current. The field effect transistor A10 includes a drain electrode A11, a source electrode A12, and a gate electrode A13. The drain electrode A11 , the source electrode A12 , and the gate electrode A13 are all linear structures and parallel to each other. [0004] If the field effect transistor A10 is appli...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/088H01L29/423
Inventor 林立凡陈宣文
Owner ANCORA SEMICON INC
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