Semiconductor device
A semiconductor and conductive layer technology, applied in the direction of semiconductor devices, transistors, electrical components, etc., can solve the problems of increasing production costs and wasting space on the substrate A20, and achieve the effects of gradually reducing production costs, increasing current, and reducing invalid areas
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[0056] image 3 It is a cross-sectional view of the semiconductor device 1 of the present invention. Figure 4 for image 3 Cutaway view of the AA section. The semiconductor device 1 can be a switching device, and can be applied in a high-power power supply.
[0057] The semiconductor device 1 includes a substrate 10 , a plurality of transistors 20 , a first conductive layer 30 , and a second conductive layer 40 . The substrate 10 can be a wafer, and its material can be silicon. The transistor 20 may be a field effect transistor 20 (Field Effect Transistor, FET) formed on the substrate 10 and arranged in an array on the substrate 10 .
[0058] In one embodiment of the present invention, the transistor 20 is a normally-on transistor, which includes a buffer layer 21, an active layer 22, a first electrode 23, a second electrode 24, a gate a gate electrode 25 , a protective layer 26 , and an insulating layer 27 . The buffer layer 21 is stacked on the substrate 10 , and the ...
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