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A kind of stable doping method of graphene film

A graphene film and graphene technology are applied in the field of graphene film processing and stable doping of graphene films, which can solve problems such as disappearance, affecting the stability of square resistance, and reducing doping effect, so as to improve stability and improve Time stability, the effect of improving quality

Active Publication Date: 2016-05-11
CHONGQING INST OF GREEN & INTELLIGENT TECH CHINESE ACADEMY OF SCI +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The existing doping technology is generally to do doping modification on the surface of graphene. The dopant attached to the surface of graphene is easily affected by various impurities in the air. As time goes by, the doping effect decreases or even disappears, thus affecting The stability of square resistance limits the application of graphene films in industrial fields such as display technology that require high square resistance of transparent conductive films

Method used

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  • A kind of stable doping method of graphene film
  • A kind of stable doping method of graphene film
  • A kind of stable doping method of graphene film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] like figure 1 The graphene stable doping structure of the shown dopant between the substrate and graphene, the process is as follows Figure 8 As shown, the specific steps are as follows:

[0043] 1.1) Graphene is grown on copper foil by CVD method, obtains graphene / copper foil sample;

[0044] 1.2) Doping on the graphene surface to obtain a doped sample, then bonding the doped sample to the substrate, and finally putting it into an etching solution to etch the copper foil to obtain graphite The sample sheet with dopant on the ene surface is finally obtained in the form of substrate, dopant, and graphene in sequence from bottom to top.

Embodiment 2

[0046] like figure 2 The stable doping structure of the shown dopant between the graphene and the graphene layer, the process is as follows Figure 9 As shown, the specific steps are as follows:

[0047] Step 1) Graphene is grown on the copper foil by CVD, and then the temporary substrate is pasted on the graphene;

[0048] Step 2) Put the copper foil into an etching solution, etch the copper foil, wash and dry it with water, and obtain a temporary substrate / graphene layer sample, and connect the graphene side of the sample to the substrate Bonding, and then remove the temporary substrate, then put the graphene surface into the doping solution for doping, after washing and drying, a sample with dopant on the graphene surface is obtained;

[0049]Step 3) the sample sheet that is provided with dopant on the graphene surface is attached to another temporary substrate / graphene layer sample sheet, and then removes the temporary substrate to obtain substrate, graphite from bottom...

Embodiment 3

[0051] like image 3 The double-layer stable doping structure of the shown dopant between the substrate and graphene, graphene and graphene, the process is as follows Figure 8 , Figure 9 As shown, the specific steps are as follows:

[0052] The step of wrapping dopant reagent molecules between graphene and graphene is specifically as follows:

[0053] Step 1) Graphene is grown on the copper foil by CVD, and then the temporary substrate is pasted on the graphene;

[0054] Step 2) Put the copper foil into an etching solution, etch, wash and dry the copper foil to obtain a temporary substrate / graphene layer sample, and connect the graphene side of the sample to the substrate Bonding, and then remove the temporary substrate, then put the graphene surface into the doping solution for doping, after washing and drying, a sample with dopant on the graphene surface is obtained;

[0055] Step 3) the sample sheet that is provided with dopant on the graphene surface is pasted on the...

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Abstract

The invention relates to a stable doping method for a graphene thin film. The stable doping method for the graphene thin film comprises the step of wrapping a doping agent between two pieces of graphene and / or wrapping the doping agent between a substrate and graphene, wherein no clinical substrate is used in the step of wrapping the doping agent between the substrate and the graphene. The method provided by the invention can be used for improving the time stability of a graphene doping effect, and thus the quality of the graphene is improved, and the graphene thin film can be widely applied in the industrial field with relatively high sheet resistance requirement on the transparent conductive thin film, such as display techniques.

Description

technical field [0001] The invention relates to a stable doping method of a graphene film, in particular to a method for stably improving the electrical properties of a graphene film, and belongs to the field of graphene film processing methods. Background technique [0002] graphene is sp 2 A two-dimensional material in which hybridized carbon atoms are arranged in a hexagonal lattice. The unique two-dimensional crystal structure endows graphene with unique properties. The thickness of single-layer graphene is 0.34nm, the light absorption is only 2.3% in a wide band, and the intrinsic carrier mobility is as high as 2.0×10 5 cm 2 ·V -1 ·s -1 , which makes graphene essentially have high transmittance and good conductivity at the same time, and can be used as a transparent conductive material. [0003] At present, the preparation methods of graphene films mainly include chemical vapor deposition method. Generally, the graphene prepared by this method cannot be used direc...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B31/04
Inventor 黄德萍姜浩朱鹏李占成张永娜高翾史浩飞
Owner CHONGQING INST OF GREEN & INTELLIGENT TECH CHINESE ACADEMY OF SCI
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