A kind of stable doping method of graphene film

A graphene film and graphene technology are applied in the field of graphene film processing and stable doping of graphene films, which can solve problems such as disappearance, affecting the stability of square resistance, and reducing doping effect, so as to improve stability and improve Time stability, the effect of improving quality
CN104528699BActive Publication Date: 2016-05-11CHONGQING INST OF GREEN & INTELLIGENT TECH CHINESE ACADEMY OF SCI +1
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
CHONGQING INST OF GREEN & INTELLIGENT TECH CHINESE ACADEMY OF SCI
Publication Date
2016-05-11

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Abstract

The invention relates to a stable doping method for a graphene thin film. The stable doping method for the graphene thin film comprises the step of wrapping a doping agent between two pieces of graphene and / or wrapping the doping agent between a substrate and graphene, wherein no clinical substrate is used in the step of wrapping the doping agent between the substrate and the graphene. The method provided by the invention can be used for improving the time stability of a graphene doping effect, and thus the quality of the graphene is improved, and the graphene thin film can be widely applied in the industrial field with relatively high sheet resistance requirement on the transparent conductive thin film, such as display techniques.
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Description

technical field

[0001] The invention relates to a stable doping method of a graphene film, in particular to a method for stably improving the electrical properties of a graphene film, and belongs to the field of graphene film processing methods. Background technique

[0002] graphene is sp 2 A two-dimensional material in which hybridized carbon atoms are arranged in a hexagonal lattice. The unique two-dimensional crystal structure endows graphene with unique properties. The thickness of single-layer graphene is 0.34nm, the light absorption is only 2.3% in a wide band, and the intrinsic carrier mobility is as high as 2.0×10 5 cm 2 ·V -1 ·s -1 , which makes graphene essentially have high transmittance and good conductivity at the same time, and can be used as a transparent conductive material.

[0003] At present, the preparation methods of graphene films mainly include chemical vapor deposition method. Generally, the graphene prepared by this method cannot be used direc...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
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