Novel device and method for reducing energy consumption of electron beam melting technology
A technology of electron beam smelting and technology, which is applied in the field of metallurgy, can solve problems such as high cost, energy loss, and impurity pollution, and achieve the effects of preventing pollution and reducing energy loss
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Embodiment 1
[0031] Such as figure 1 As shown, a new device for reducing energy consumption of the electron beam melting technology includes a water-cooled melting crucible, and a 5mm silicon carbide substrate 2 is provided at the bottom of the inner wall of the water-cooled melting crucible.
[0032] A novel method for reducing energy consumption of electron beam smelting technology, characterized in that it comprises the following steps:
[0033] a. Remove the water vapor from the silicon carbide substrate 2; place the silicon carbide substrate in a vacuum heating furnace under the conditions of a vacuum degree of 0.01Pa, a heating temperature of 150°C, and a holding time of 3 hours; put the silicon carbide substrate into a water-cooled on the smelting crucible;
[0034] b. Load the polysilicon material to be processed on the silicon carbide substrate, and add the polysilicon material to the electron beam feeding device;
[0035] c. Preheat the electron gun; close the door of the elec...
Embodiment 2
[0040] Such as figure 2 As shown, a new device for reducing energy consumption of electron beam smelting technology includes a water-cooled melting crucible, the bottom and sides of the inner wall of the water-cooled melting crucible are sequentially provided with a 40mm silicon carbide substrate 2 and a 30mm graphite substrate from top to bottom 3.
[0041] A novel method for reducing energy consumption of electron beam smelting technology, characterized in that it comprises the following steps:
[0042] a. Remove the water vapor from the graphite substrate 3 and the silicon carbide substrate 2; place the graphite substrate in a vacuum heating furnace, the heating conditions are: vacuum degree 0.008Pa, heating temperature 400°C, holding time 2 hours, the silicon carbide substrate The bottom is placed in a vacuum heating furnace, the heating conditions are vacuum degree of 0.008Pa, heating temperature of 300°C, and holding time of 1 hour; the graphite substrate is placed on t...
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