Synchrotron radiation μ-xrd technology in situ measurement method of fusion method crystal growth microstructure and micro crystal growth furnace
A technology of crystal growth and -XRD, applied in the direction of material analysis using radiation diffraction, furnace, furnace type, etc., can solve the problems of undetermined and undetermined Raman spectrum of growth element order and orientation
Active Publication Date: 2016-06-08
HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI
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Problems solved by technology
However, although Raman spectroscopy reveals that the crystal microscopic growth units in the crystal growth boundary layer have the characteristics of a crystal unit cell structure, there are still some problems that are difficult to solve by Raman spectroscopy. For example, although Raman spectroscopy shows that the crystal growth in the boundary layer The growth unit has the characteristics of a unit cell structure, but whether it is a real unit cell structure cannot be determined by the characteristic peaks of the Raman spectrum; for another example, the closer the measurement point is to the crystal boundary, the Raman spectrum in the boundary layer The stronger the characteristic peak is, it is caused by the increase in the number of growth units or the growth of the growth units connected to each other, and the Raman spectrum itself cannot be determined; whether the growth units have a certain degree of order and orientation Mann spectroscopy itself cannot be determined
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[0028] In order to make the technical means, creative features, goals and effects achieved by the present invention easy to understand, the present invention will be further described below in conjunction with specific illustrations.
[0029] like Figure 1-Figure 6 As shown, the synchrotron radiation μ-XRD technology in situ and real-time measurement method of crystal growth microstructure by fusion method, the specific steps are as follows:
[0030] 1. put the experimental crystal into the crucible 7 in the furnace as the crystal growth raw material (it can be crystal fragments or solidified polycrystalline flakes), and the experimental crystal is made into a crystal flake 21 with a thickness slightly smaller than the diameter of the crucible 7, And there is a notch 210 on both sides above the crystal sheet 21, and the crystal sheet 21 is fixed on the platinum wire 20 at the lower end of the seed rod 19 through the notch, and the screw knob 17 is adjusted to insert the lower...
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The invention discloses a method for in-situ measurement of fusion method crystal growth microstructures through synchrotron radiation mu-XRD technology. The method is based on the synchrotron radiation mu-XRD technology, the microstructures of different regions such as crystals, boundary layers and melts are measured in situ and in real time during fusion method crystal growth, and therefore change rules from the melts to the crystal microstructures are obtained during fusion method crystal growth. The invention further provides a minicrystal growing furnace for in-situ measurement of fusion method crystal growth through the synchrotron radiation mu-XRD technology. By means of the minicrystal growing furnace, in-situ and real-time observation can be conducted on the microstructures of the crystals, the boundary layers and the melts during crystal growth.
Description
technical field [0001] The invention relates to a method for in-situ real-time measurement of the microstructure of crystal growth by melting method by synchrotron radiation μ-XRD technology and a micro-crystal growth furnace, belonging to the field of experimental methods for in-situ real-time measurement of material microstructure. Background technique [0002] The study of the microscopic mechanism of crystal growth by melting method is the key to the study of crystal growth mechanism. The method of structural change, and the crystal growth hot stage (micro crystal growth furnace) adapted to the in-situ measurement of high-temperature Raman spectroscopy, have used high-temperature micro-Raman spectroscopy to study the microscopic growth mechanism of dozens of crystals, and found that in Between the melt (or high-temperature solution) and the crystal, there is a region where the structural unit of the melt (high-temperature solution) transitions to the structure of the mic...
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IPC IPC(8): F27B17/02G01N23/20
Inventor 殷绍唐张德明孙彧张庆礼孙敦陆
Owner HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI