Detection device and detection method for detecting the growth rate and diameter of polycrystalline silicon rod

Abstract

The invention discloses a detection device and a detection method for detecting the growth rate and diameter of a polycrystalline silicon rod. The detection device comprises a camera device and an industrial personal computer, the camera device and the industrial personal computer are electrically connected, and the camera device is arranged in front of a quartz sight glass in the wall of a polycrystalline silicon reduction furnace. The detection method comprises the following steps: (1) a silicon rod core is placed in the polycrystalline silicon reduction furnace; (2) the camera device acquires data; and (3) the industrial personal computer performs data analysis. By designing the method for silicon rod diameter detection, the silicon rod diameter, an important parameter in the operation of the reduction furnace, can be acquired, the deposition rate, instantaneous power consumption and instantaneous conversion rate of different growth stages can be worked out, the operation of the reduction furnace can be guided and optimized on the basis, and reasonable raw materials and heating current can be given according to the growth diameter of the silicon rod, thus improving the operation efficiency of the reduction furnace.

Description

Technical field: [0001] The invention relates to a detection device and a detection method of a polycrystalline silicon rod, in particular to a detection device and a detection method of the growth rate and diameter of a polycrystalline silicon rod. Background technique: [0002] At present, the mainstream polysilicon production technology at home and abroad is the improved Siemens method. This method produces high-purity polysilicon by chemical vapor deposition reaction on the surface of high-temperature silicon core (silicon rod) energized in the reduction furnace under high temperature conditions by trichlorosilane and hydrogen. The diameter of the silicon rod in the furnace increases gradually until the specified rod diameter. During the growth of silicon rods, the diameter of silicon rods is an important basis for the given material flow and heating current in process control. For a long time, the control of the reduction furnace mostly uses the method of manually esti...

AI Technical Summary

Problems solved by technology

For a long time, the control of the reduction furnace has mostly used the method of manually estimating the rod diameter to explore the material flow and heating current. Due to the deviation of manual estimation, the matching of material and current cannot achieve the best effect, which brings difficulties to the optimization of deposition efficiency.

The specific manifestations are: 1. It is difficult to control the amount of raw material gas added accurately. If the added amount is too small, the silicon core will grow slowly, the growth efficiency will be low, and energy will be wasted; if the added amount is too large, the new crystal structure will be loose, and the product quality will not be guaranteed. And the reaction is insufficient, and the excess raw material gas is vented, causing waste and polluting the environment; 2. The heating voltage (current) is difficult to control accurately, and the temperature of the silicon core deviates from the optimal reaction temperature, which has a negative impact on the growth of the silicon core

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