InGaAs/QWIP (Quantum Well Infrared Photodetector) two-color infrared detector and preparation method thereof
An infrared detector and infrared radiation technology, which is applied in the field of photodetectors, can solve problems such as inability to realize detection, and achieve the effects of avoiding the increase of interface resistance, high mechanical strength, and reducing costs
Active Publication Date: 2015-04-22
SUZHOU SUNA PHOTOELECTRIC
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[0004] However, at present, the two-color infrared detector based on QWIP mostly adopts the multi-quantum well structure of GaAs / AlGaAs quasi-matching system in the long-wave infrared active region, and the peak response is in the far-infrared band; in addition, an additional active region uses InGaAs / GaAs The microstrip superlattice structure of the / AlGaAs strain system responds to the mid-wave infrared band; it cannot realize the detection of two bands with large wavelength differences in the near-infrared and far-infrared bands
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[0032] In order to make the above objects, technical solutions and advantages of the present invention more obvious and easy to understand, the present invention will be described in detail below in conjunction with several typical embodiments.
[0033] In a more specific implementation case of the present invention, it is mainly based on the plasma wafer bonding technology, by combining the PIN-InGaAs infrared detector grown on the N-InP substrate with the GaAs / AlGaAs QWIP structure bonding integration realizes InGaAs / QWIP dual-color infrared detector.
[0034] Further, the preparation process of the InGaAs / QWIP two-color infrared detector includes: growing a PIN-InGaAs infrared detector unit on the N-InP substrate; GaAs / AlGaAs QWIP structural unit on the N-GaAs substrate; Bulk wafer bonding integrates the two into a two-color infrared detector.
[0035] Further, see Figure 1-Figure 3 , in a typical implementation case, a method for manufacturing an InGaAs / QWIP two-color ...
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The invention discloses an InGaAs / QWIP (quantum Well Infrared Photodetector) two-color infrared detector. The InGaAs / QWIP two-color infrared detector comprises a PIN-InGaAs infrared detector unit and a GaAs / AlGaAs QWIP structure unit, wherein the PIN-InGaAs infrared detector unit is integrated with the GaAs / AlGaAs QWIP structure unit through a wafer bonding way to form the two-color infrared detector. The invention also discloses a preparation method of the two-color infrared detector. By adopting the plasma wafer bonding way, the InGaAs infrared detector and the QWIP are integrated to form the two-color infrared detector, so that the two-color detection for near-infrared radiation and the far-infrared radiation can be realized; meanwhile, the photo loss of a bonded interface can also be reduced, and the problems such as increased interface resistance, increased interface defects and the like caused by the hot expansion when a high temperature bonding way is used for bonding can be avoided. The InGaAs / QWIP two-color infrared detector is simple in structure and excellent and stable in performance; moreover, the preparation process is simple and controllable, low in cost and applicable to the mass production.
Description
technical field [0001] The invention relates to a semiconductor device, in particular to an InGaAs / QWIP two-color infrared detector and a preparation method thereof, belonging to the technical field of photodetectors. Background technique [0002] Since its discovery, infrared rays have been gradually known and played an increasingly important role in fields such as information technology and communications, healthcare and life sciences, national defense and aviation. The infrared spectrum is a spectrum invisible to the human eye, and its wavelength ranges from 0.75 microns to 1000 microns, which is between visible light red and microwaves. According to its wavelength, it can be divided into four categories: near-infrared, mid-infrared, far-infrared, and extremely far-infrared. With the continuous promotion and development of infrared applications, advanced infrared detection technology requires detectors to have higher spatial resolution and better target recognition capab...
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Login to View More IPC IPC(8): H01L31/09H01L31/103H01L31/18H01L25/18
CPCH01L25/18H01L31/09H01L31/103H01L31/109H01L31/1844Y02P70/50
Inventor 代盼陆书龙谭明吴渊渊季莲其他发明人请求不公开姓名
Owner SUZHOU SUNA PHOTOELECTRIC