Temperature Control Method in Polysilicon Production Process
A temperature control method and production process technology, applied in the direction of polycrystalline material growth, crystal growth, chemical instruments and methods, etc., can solve the problems of large time constant and pure hysteresis, time lag of control action, etc.
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[0011] In order to have a clearer understanding of the technical features, purposes and effects of the present invention, the specific implementation manners of the present invention will now be described with reference to the accompanying drawings.
[0012] According to an embodiment of the present invention, a process control method for the hydrogen reduction process of trichlorosilane in polysilicon production is provided. For ease of understanding: below, first briefly introduce the hydrogen reduction process of trichlorosilane in the polysilicon production process.
[0013] The hydrogen reduction process of trichlorosilane includes: connecting the silicon core with the electrode of the reduction furnace, and feeding the mixed gas of trichlorosilane and hydrogen into the reduction furnace. On the surface of the hot silicon core energized in the reduction furnace, trichlorosilane undergoes a hydrogen reduction reaction to form silicon and deposit it, making the diameter of ...
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