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Methods for defining Z-direction magnetoresistance induction film pattern of 3D AMR (three-dimensional anisotropic magnetoresistance) sensor

A technology of sensing film and magnetoresistance, applied in the field of defining the pattern of 3D AMR sensor Z-direction magnetoresistance sensing film, can solve the problems of uneven photoresist coating, large etching amount, difficult to analyze the photolithography pattern, etc. The effect of good definition, low cost and simple process

Active Publication Date: 2015-04-29
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This pattern definition method for the magnetoresistive sensing thin film at the bottom of the trench has defects such as uneven coating of photoresist, difficulty in analyzing the photolithography pattern, complicated trench filling process, large etching amount, and difficulty in controlling the etched morphology.

Method used

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  • Methods for defining Z-direction magnetoresistance induction film pattern of 3D AMR (three-dimensional anisotropic magnetoresistance) sensor
  • Methods for defining Z-direction magnetoresistance induction film pattern of 3D AMR (three-dimensional anisotropic magnetoresistance) sensor
  • Methods for defining Z-direction magnetoresistance induction film pattern of 3D AMR (three-dimensional anisotropic magnetoresistance) sensor

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Experimental program
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Effect test

Embodiment 1

[0046] Step 1, cleaning the silicon wafer, growing the first dielectric film 2 on the silicon substrate 1, such as image 3 shown. In this embodiment, the first dielectric film 2 is Si 3 N 4 membrane.

[0047] Step 2, grow the second dielectric film 3 by chemical vapor deposition method, such as Figure 4 shown. The second dielectric film 3 is a silicon oxide film.

[0048] Step 3, forming the groove of the second dielectric film 3 by photolithography and etching, such as Figure 5 shown. The first dielectric film 2 is used as an etch stop layer in this step of etching.

[0049] Step 4, use an isotropic etching method to incompletely etch the first dielectric film 2, and form a lateral groove under the trench described in step 3, such as Image 6 shown. In this step of etching, the thickness of the etched first dielectric film 2 needs to be significantly greater than the sum of twice the thickness of the third dielectric film 4 plus the thickness of the magnetoresista...

Embodiment 2

[0053] Step 1, cleaning the silicon wafer, growing the first dielectric film 2 on the silicon substrate 1, such as Figure 9 shown. In this embodiment, the first dielectric film 2 is Si 3 N 4 membrane.

[0054] Step 2, growing the fourth dielectric film 6, such as Figure 10 shown. The fourth dielectric film 6 is silicon oxide or cured polyimide whose doping concentration is lower than that of the second dielectric film.

[0055] Step 3, grow the second dielectric film 3 by chemical vapor deposition method, such as Figure 11 shown. The second dielectric film 3 is a silicon oxide film.

[0056] Step 4, forming the groove of the second dielectric film 3 by photolithography and etching, such as Figure 12 shown.

[0057] Step 5, using an isotropic etching method to incompletely etch the fourth dielectric film 6, and form a lateral groove under the groove described in step 4, such as Figure 13 shown. In this step of etching, the thickness of the etched fourth dielectr...

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Abstract

The invention discloses two methods for defining a Z-direction magnetoresistance induction film pattern of a 3D AMR (three-dimensional anisotropic magnetoresistance) sensor. One method comprises the following steps: growing a first dielectric film and a second dielectric film on a silicon substrate; forming a groove of the second dielectric film by photolithographic etching; etching the first dielectric film with a wet process or an isotropic gas etching method; forming a transverse groove below the groove; finally, growing a third dielectric film and sputtering the magnetoresistance induction film. The other method comprises the following steps: growing the first dielectric film on a silicon substrate to serve as an etching stop layer; growing a layer of fourth dielectric film; forming the transverse groove in the fourth dielectric film. According to the methods, the transverse groove is formed according to a characteristic that different dielectric films or dielectric films with different doping concentrations have a selection ratio for isotropic etching, and the Z-direction magnetoresistance film is formed according to a metal sputtering film-forming principle, so that the pattern defining effect is improved, a process is simplified, and the cost is reduced.

Description

technical field [0001] The invention relates to the field of integrated circuit manufacturing, in particular to a method for defining a Z-direction magnetoresistance sensing film pattern of a 3D AMR sensor. Background technique [0002] 3D AMR (Anisotropic Magnetoresistance, referred to as AMR) is based on the anisotropic magnetoresistance effect, that is, when the applied magnetic field is perpendicular to the current in the ferromagnetic material, the resistance produces a significant change. By using standard semiconductor technology on silicon wafers or other substrates A magnetic sensor with X, Y, Z 3D induction is formed by preparing ferromagnetic thin film strips on the surface, supplemented by the integration of peripheral circuits and control ICs. [0003] Due to the advantages of low power consumption, high integration, high sensitivity, low noise, high reliability, and strong resistance to harsh environments, anisotropic magnetoresistive sensors account for an inc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/12H10N50/01
Inventor 程晋广
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP