Growth method for improving quality of aluminum nitride film crystal by temperature modulation

Abstract

The invention discloses a growth method for improving quality of aluminum nitride film crystal by temperature modulation. The growth is carried out in MOCVD equipment and comprises four stages of baking, nucleation, temperature-modulation epitaxial growth and secondary epitaxial growth again. Through an in-situ temperature modulation technology, the growth speed and stress of aluminum nitride are changed by modulating a growth temperature in the epitaxial growth process after an aluminum nitride nucleating layer grows, so that partial dislocation is bent; finally annihilation caused by combination is generated; the dislocation density in an aluminum nitride film is reduced; and the crystal quality is improved. The growth method has the advantages that the method for introducing a temperature modulation layer in the epitaxial growth process of the aluminum nitride material is simple and feasible; the epitaxial material is good in property; and the growth is an effective solving scheme for achieving high-quality epitaxial growth of the aluminum nitride film.

Description

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AI Technical Summary

Benefits of technology

This technology helps reduce defects caused by misalignment between layers during manufacturing processes that use nitride semiconductors such as gallium arsenide (GaAs). By introducing this interlayer with specific chemical compositions or physical conditions, it becomes possible to prevent these issues from happening at all levels of production efficiency while maintaining excellent device performance characteristics like reduced leakage current and improved heat dissipation capabilities.

Problems solved by technology

This patents describes methods for creating highly pure alpha -nitrogen monocarbide (α-NGa2) at room temperatures or near infra red wavelengths. These techniques involve controllably heating certain elements called group III metathetically dressed compounds containing specific metal cations like copper(II)). By doing this, these elemental structures become more stable than previously known ones due to their small size and lack of defects during manufacturing processes. Additionally, when making optical components, quantum well type transistors, microwave amplifiers, and other electronic device technologies, α-ΝGa_{1/β_III} , which includes many alloys made from different types of tungsten and tantalum, can be useful substances for use in various fields including photonics.

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