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A light emitting diode and its manufacturing method

A technology of light-emitting diodes and manufacturing methods, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of reducing LED luminous efficiency, and achieve the effects of promoting expansion, improving luminous efficiency, and reducing absorption

Active Publication Date: 2017-10-03
HC SEMITEK CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In order to solve the problem in the prior art that LED luminous efficiency is reduced due to strip-shaped regions absorbing the light emitted by the epitaxial layer, an embodiment of the present invention provides a light-emitting diode and its manufacturing method

Method used

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  • A light emitting diode and its manufacturing method
  • A light emitting diode and its manufacturing method
  • A light emitting diode and its manufacturing method

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Embodiment 1

[0042] An embodiment of the present invention provides a light emitting diode, see figure 1 , the light emitting diode includes a permanent substrate 1, and an adhesive layer 2, a first insulating layer 3, a spiral coil 4, a second insulating layer 5, a metal reflective layer 6, a P-type layer 7, Light emitting layer 8 , N-type layer 9 and N-type electrode 10 .

[0043] Wherein, the centerline of the helical coil 4 is parallel to the formation direction of each layer of the light emitting diode, one end of the helical coil 4 passes through the second insulating layer 5 and is connected to the metal reflective layer 6, and the other end of the helical coil 4 passes through the first The insulating layer 3 is connected to the adhesive layer 2 . Both the adhesive layer 2 and the permanent substrate 1 are made of non-insulating materials.

[0044] In a specific implementation, on the one hand, a through hole along the formation direction of each layer of the LED is provided in t...

Embodiment 2

[0061] An embodiment of the present invention provides a method for manufacturing a light emitting diode, see Figure 5 , the manufacturing method includes:

[0062] Step 201: growing an N-type layer, a light-emitting layer, and a P-type layer sequentially on a temporary substrate to form an epitaxial layer.

[0063] Figure 6a It is a schematic structural diagram of the LED after step 201 is executed. Wherein, 11 represents a temporary substrate, 9 represents an N-type layer, 8 represents a light-emitting layer, and 7 represents a P-type layer.

[0064] Optionally, the temporary substrate can be made of one or more of sapphire, AlN, SiC, and GaN.

[0065] Step 202: forming a metal reflective layer on the P-type layer.

[0066] Figure 6b It is a schematic structural diagram of the LED after step 202 is executed. Wherein, 11 represents a temporary substrate, 9 represents an N-type layer, 8 represents a light-emitting layer, 7 represents a P-type layer, and 6 represents a...

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Abstract

The invention discloses a light emitting diode and a manufacturing method thereof, belonging to the technical field of semiconductors. The light-emitting diode includes a permanent substrate, and an adhesive layer, a first insulating layer, a spiral coil, a second insulating layer, a metal reflective layer, a P-type layer, a light-emitting layer, an N-type layer and an N-type layer formed sequentially on the permanent substrate. The center line of the helical coil is parallel to the formation direction of each layer of the light-emitting diode, one end of the helical coil passes through the second insulating layer and connects with the metal reflective layer, and the other end of the helical coil passes through the first insulating layer and connects with the adhesive Junction connections, bonding layers and permanent substrates are made of non-insulating materials. In the present invention, a magnetic field is formed by a spiral coil, and the electrons in the N-type layer are deflected toward one side around the N-type layer, so that the electrons in the N-type layer are evenly distributed on one side around the N-type layer under the action of the Lorentz force. The current in the N-type layer is dispersed, combined with the LED chip electrode design, the luminous efficiency of the LED is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a light emitting diode and a manufacturing method thereof. Background technique [0002] A light emitting diode (Light Emitting Diode, referred to as LED) is a semiconductor light emitting device, which is widely used in indicator lights, display screens and the like. White light LED is the third generation of electric light source after incandescent lamp and fluorescent lamp. The energy consumption of white light LED is only one-eighth of incandescent lamp, one-half of fluorescent lamp, and its life span can be as long as 100,000 hours. It can be described as "once and for all". [0003] Existing LEDs include a substrate and an epitaxial layer stacked on the substrate. The epitaxial layer includes an N-type layer, a light-emitting layer, and a P-type layer stacked on the substrate in sequence. The epitaxial layer has a layer extending from the P-type layer to the N-type ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/02H01L33/00
CPCH01L33/00H01L33/02
Inventor 尹灵峰谢鹏韩涛王江波刘榕
Owner HC SEMITEK CORP