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Opening method of chip packages

A chip packaging and packaging technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as chip and lead damage, and achieve the effect of improving and avoiding damage.

Active Publication Date: 2015-05-27
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of this application is to provide a method for unsealing a chip package to solve the problem of damage to chips and leads during the unsealing process in the prior art

Method used

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  • Opening method of chip packages
  • Opening method of chip packages

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0044] A plasma etching machine model of Plasma lab80plus was used as the dry etching device, the excitation power of the plasma etching machine was set to 1000W, the bias voltage was 500V, and the etching gas was Ar and o 2 , the pressure of the etching gas is 100mT, the flow rate is 1000sccm, the etching time is 20min, and the etching rate is about 25μm / min. The thickness of the etched plastic compound layer is calculated by the etching rate and etching time. The distance from the top surface of the etched plastic compound layer to the highest point of the lead is 20 μm.

[0045] The unsealing device disclosed in the patent application with application number 200910056017.8 is used for chemical wet etching, wherein the etching solution is a mixed acid solution composed of fuming nitric acid and 98% sulfuric acid with a volume ratio of 1:1, and the etching temperature is After 35° C. for 500 s, the upper surface of the chip was exposed and cleaned with deionized water to obt...

Embodiment 2

[0047] A plasma etching machine model of Plasma lab80plus was used as the dry etching device, the excitation power of the plasma etching machine was set to 1500W, the bias voltage was 100V, and the etching gas was Ar and Ar with a volume ratio of 6:3. O2, the pressure of the etching gas is 200mT, the flow rate is 800sccm, the etching time is 25min, and the etching rate is about 22μm / min. Calculate the thickness of the etched plastic compound layer according to the etching rate and etching time. The distance from the top surface of the etched plastic encapsulant layer to the highest point of the lead is 12 μm.

[0048] The unsealing device disclosed in the patent application with application number 200910056017.8 is used for chemical wet etching, wherein the etching solution is a mixed acid solution composed of fuming nitric acid and 98% sulfuric acid with a volume ratio of 1:3, and the etching temperature is After 40° C. for 500 s, the upper surface of the chip was exposed and...

Embodiment 3

[0050] A plasma etching machine model Plasma lab80plus was used as the dry etching device, the excitation power of the plasma etching machine was set to 600W, the bias voltage was 800V, and the etching gas was Ar and Ar with a volume ratio of 4:1. O2, the pressure of the etching gas is 50mT, the flow rate is 1500sccm, the etching time is 15min, and the etching rate is about 30μm / min. Calculate the thickness of the etched plastic compound layer by the etching rate and etching time. The top surface of the etched plastic encapsulant layer is 30 μm away from the highest point of the lead.

[0051] The unsealing device disclosed in the patent application with application number 200910056017.8 is used for chemical wet etching, wherein the etching solution is a mixed acid solution composed of fuming nitric acid and 98% sulfuric acid with a volume ratio of 1:2, and the etching temperature is After 30° C. for 600 s, the upper surface of the chip is exposed and cleaned with deionized wa...

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PUM

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Abstract

The application provides an opening method of chip packages. The chip package includes a plastic package material layer, a lead wire and a chip; the opening method comprises the following steps: using a dry etching technique for thinning the plastic package material layer on the upper surface of the chip package, so as to obtain a pre-opened package; performing chemical wet etching on the pre-opened package until the upper surface of a chip is exposed. On one hand, the opening method avoids excessive corrosion of the chip and the lead wire due to strong etching property of too much chemical wet etching liquor in the prior art; on the other hand, the dry etching technique is used for performing anisotropic etching on the plastic package material layer of the chip package, to achieve the precise etching of the plastic package material layer; therefore, a combination of both aspects above can avoid damage to the chip and the lead wire during opening and improve the opening effect.

Description

technical field [0001] The present application relates to the technical field of semiconductor manufacturing, and in particular, to a method for unsealing a chip package. Background technique [0002] After the main functional devices of the chip are manufactured, the chip needs to be packaged to form a chip package. At present, the commonly used packaging materials are epoxy molding compounds. Epoxy molding compounds use epoxy resin as the matrix resin, phenolic resin as the curing agent, and some fillers, such as fillers, flame retardants, colorants, coupling agents, etc. Under the action of heat and curing agent, the epoxy group of the epoxy resin reacts chemically with the phenolic resin to produce cross-linking and curing to make it a thermosetting plastic. The formed chip package generally has the following figure 2 In the shown structure, the chip 30 and the lead 20 are covered in the molding compound layer 10 of the package. Since the leads inside the chip package...

Claims

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Application Information

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IPC IPC(8): H01L21/00
Inventor 殷原梓高保林张菲菲
Owner SEMICON MFG INT (SHANGHAI) CORP
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