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Photomask blank

A technology of photomask blanks and photomasks, applied in optics, originals for photomechanical processing, instruments, etc., can solve the problems of reduced precision of light shielding films, pattern loss, and resist pattern collapse

Active Publication Date: 2015-06-10
SHIN ETSU CHEM CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Thus, the accuracy of transferring the pattern to the light-shielding film via the resist pattern as an etching mask decreases
In extreme cases, the resist pattern partially collapses or lifts off, resulting in pattern loss (dropout)

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1－3 and comparative example 1－4

[0068] On a quartz substrate of 152 mm square and 6 mm thick, a halftone phase shift film of MoSiON having a transmittance of 6% at a wavelength of 193 nm was formed to a thickness of 80 nm. On this halftone phase shift film, by using Ar gas and O 2 Gas, N 2 gas and CH 4 The reactive gas of the gas is used as the sputtering gas in the sputtering process to deposit the chromium-based light shielding film. A chromium-based light-shielding film was deposited to such a thickness that it had an optical density (OD) of 1.85 at a wavelength. The composition, A-value, thickness, and sheet resistance of the chromium-based light-shielding films were determined. The composition was analyzed by X-ray photoelectron spectroscopy (XPS). The value of A is given by equation (2):

[0069] A=2O+3N-2Cr (2)

[0070] Wherein, O is the oxygen content (atomic %), N is the nitrogen content (atomic %), and Cr is the chromium content (atomic %). Sheet resistance was measured by the galvanostatic ...

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Abstract

A photomask blank comprising a transparent substrate and a chromium-containing film deposited thereon is provided. The chromium-containing film comprises at least one CrC compound layer comprising up to 50 at% of Cr, at least 25 at% of O and / or N, and at least 5 at% of C. From the blank, a photomask having a photomask pattern formed on the substrate is produced, the photomask being used in photolithography of forming a resist pattern with a line width of up to 0.1 µm, using exposure light having a wavelength of up to 250 nm.

Description

technical field [0001] The present invention relates to photomask blanks for forming photomasks. Background technique [0002] The challenge of higher integration of large scale integrated circuits continues with goals such as higher operating speed and savings in power consumption. In order to meet the increasing demands for the miniaturization of wiring patterns for constructing circuits and the miniaturization of contact hole patterns for interlayer connections of trenches, advanced semiconductor microfabrication technology has become important. [0003] Advanced microfabrication techniques rely on photolithography using photomasks with various modifications such as immersion exposure and altered illumination. Like exposure tools and resist materials, photomasks are an important aspect of miniaturization technology. In order to obtain a photomask capable of providing a fine-sized wiring pattern or a fine-sized contact hole pattern as described above, efforts have been m...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F1/54G03F1/80G03F1/26
CPCG03F1/26G03F1/30G03F1/54G03F1/58G03F1/68G03F1/46
Inventor 笹本纮平稻月判臣深谷创一中川秀夫金子英雄
Owner SHIN ETSU CHEM CO LTD