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Quick-response low-dropout regulator

A low-dropout linear, fast-response technology, applied in instruments, regulating electrical variables, control/regulating systems, etc., can solve the problem of high power consumption of LDO, avoid voltage drop and overshoot, and achieve the effect of fast response speed

Active Publication Date: 2015-06-10
XI AN UNIIC SEMICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In order to solve the technical problem of high power consumption of the existing low dropout linear regulator LDO, the present invention provides a fast response low dropout linear regulator LDO

Method used

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Embodiment Construction

[0024] The present invention adds a reference voltage generating circuit, an NMOS transistor M1, and a PMOS transistor M2 on the original basis. The threshold voltage of the NMOS transistor M1 is Vthn, and the threshold voltage of the PMOS transistor M2 is Vthp. The reference voltage generation circuit 10 generates reference voltages vbn and vbp. Among them, vbn=Vout+Vthn+△V, vbp=Vout-Vthp-△V; △V is a value that can be trimmed and can be adjusted according to application needs.

[0025] During normal operation, the operational amplifier ensures Vref=Vfb=vout*R2 / (R1+R2) by adjusting the gate voltage of the power transistor 14, thereby ensuring Vout=Vref*(R1+R2) / R2; through the operational amplifier 13, The loop formed by the voltage dividing resistor string 15 and the power tube 14 is used to adjust the value of Vout to be stable.

[0026] If the output voltage Vout of the LDO has a voltage drop to Vout2, when the voltage drop value Vout-Vout2>△V, the NMOS transistor M1 will ...

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Abstract

The invention relates to a quick-response low-dropout regulator. The quick-response low-dropout regulator comprises a band-gap reference, an operational amplifier, a feedback resistor string and a power tube, wherein the band-gap reference is used for generating reference voltage Vref and inputting the reference voltage to a negative input end of the operational amplifier, the feedback resistor string is connected with a positive input end of the operational amplifier, one end of the feedback resistor string is connected with a leak end of the power tube, the other end of the feedback resistor string is grounded, a source end of the power tube is connected with a power source VDD, and a grid end of the power tube is connected with the output end of the operational amplifier. The quick-response low-dropout regulator further comprises a reference voltage generation circuit, an NMOS (N-channel metal oxide semiconductor) transistor M1 and a PMOS (P-channel metal oxide semiconductor) transistor M2, wherein the input end of the reference voltage generation circuit is connected with the band-gap reference, the reference voltage generation circuit is used for generating reference voltage vbn and vbp. The quick-response low-dropout regulator solves the technical problem of high power consumption of an existing low-dropout regulator LDO, and too much voltage drop and overshoot is avoided by adding a part of auxiliary circuit.

Description

technical field [0001] The invention relates to a fast-response low-dropout linear regulator LDO. Background technique [0002] A general LDO consists of a bandgap reference, an operational amplifier, a feedback resistor string and 14 adjustable power tubes. The bandgap reference produces a reference voltage Vref for comparison; the feedback resistor string determines the feedback coefficient; the operational amplifier adjusts the gate voltage of the power transistor 14, [0003] Let the feedback voltage Vfb=Vref=Vout*R2 / (R1+R2). [0004] Therefore, the output voltage Vout of the LDO=Vref*(R1+R2) / R2. By increasing the quiescent current Iq of the operational amplifier to improve the response speed of the LDO, thereby reducing the voltage drop and overshoot of the LDO output, and speeding up the recovery speed of the LDO output voltage. Although this method can avoid the large voltage drop and large overshoot of the output of the LDO; and speed up the response speed of the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G05F1/56
Inventor 成俊
Owner XI AN UNIIC SEMICON CO LTD
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