Gate oxide layer manufacturing method
A technology of gate oxide layer and manufacturing method, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problem of large difference in thickness between the side wall and bottom of the trench, and achieve reduced thickness difference and improved uniformity , the effect of improving reliability
Inactive Publication Date: 2015-06-10
SEMICON MFG INT (SHANGHAI) CORP
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Problems solved by technology
[0009] The invention provides a method for manufacturing a gate oxide layer to solve the problem in the prior art that the thickness difference between the side wall and the bottom of the trench is relatively large
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[0030] The method for manufacturing the gate oxide layer proposed by the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. According to the following description and claims, the advantages and features of the present invention will be more clear. It should be noted that the accompanying drawings are all in a very simplified form and use inaccurate ratios, which are only used for convenience and clarity to assist in explaining the present invention. Purpose of the example.
[0031] figure 1 A schematic flow chart of a method for manufacturing a gate oxide layer provided by an embodiment of the present invention, as shown in figure 1 As shown, a method for manufacturing a gate oxide layer proposed by the present invention includes the following steps:
[0032] Step S01: providing a semiconductor substrate, on which a trench is formed;
[0033] Step S02: Put the semiconductor substrate into a fur...
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The invention provides a gate oxide layer manufacturing method. The gate oxide layer manufacturing method includes: placing a semiconductor substrate with a groove into a furnace tube and feeding oxygen into the furnace tube to form a first gate oxide layer on the sidewall and at the bottom of the groove; feeding nitrogen into the furnace tube and heating the furnace tube; feeding the oxygen and catalyzing gas into the furnace tube to form a second gate oxide layer on the first gate oxide layer. The thickness of the first gate oxide layer on the sidewall of the groove is larger than that of the same at the bottom of the groove, due to influences of the catalyzing gas and the formed first gate oxide layer, the thickness of the second gate oxide layer on the sidewall of the groove is smaller than that of the same at the bottom of the groove, and the second gate oxide layer is formed on the first gate oxide layer, so that the thickness difference between the sidewall and the bottom of the groove is reduced, evenness of the gate oxide layers is improved, and reliability of a device is improved.
Description
technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for manufacturing a gate oxide layer. Background technique [0002] The manufacturing process of the gate oxide layer is a key technology in the semiconductor manufacturing process, which directly affects and determines the electrical characteristics and reliability of the device. [0003] The traditional fabrication process of the gate oxide layer is to use thermal oxidation method to expose the semiconductor substrate to an oxygen-containing environment in a high-temperature environment to form a gate oxide layer on the surface of the semiconductor substrate. The process is carried out in a furnace tube realized in. However, if it is necessary to grow a gate oxide layer in the trench after etching, such as a trench power device, it is necessary to expose the semiconductor substrate containing the trench to an oxygen-containing environment in a high-temperatu...
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Inventor 翟志刚高文文李凌云
Owner SEMICON MFG INT (SHANGHAI) CORP