Unlock instant, AI-driven research and patent intelligence for your innovation.

Chip, integrated circuit, micro-electronic mechanical system and method for forming chip

A chip, three-dimensional chip technology, applied in circuits, electrical components, microstructure technology, etc., can solve the problem that the density of the device layer has not been effectively improved, and achieve the effect of improving the heat dissipation effect and strong heat dissipation capacity.

Active Publication Date: 2015-06-24
SEMICON MFG INT (SHANGHAI) CORP
View PDF3 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the 2.5D chip, there is no TSV in each two-dimensional chip, but the TSV is set in a special substrate to form a TSV substrate. Silicon Interposer) connection, and then connected to the packaging substrate through a layer of TSV substrate, but the device layer density of this 2.5D chip stacking technology has not been effectively improved

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Chip, integrated circuit, micro-electronic mechanical system and method for forming chip
  • Chip, integrated circuit, micro-electronic mechanical system and method for forming chip
  • Chip, integrated circuit, micro-electronic mechanical system and method for forming chip

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0046] The present application will be described in detail below with reference to the accompanying drawings and embodiments. It should be noted that, in the case of no conflict, the embodiments in the present application and the features in the embodiments can be combined with each other.

[0047] The present application provides a chip, which includes a semiconductor substrate and a heat dissipation through-silicon via structure arranged in the semiconductor substrate, wherein the heat dissipation through-silicon via structure has a micro heat pipe. The micro heat pipe includes a conductive casing and a heat pipe working medium. Wherein the conductive housing forms a closed inner cavity, and the working medium of the heat pipe is sealed inside the inner cavity. The present application also provides an integrated circuit including the aforementioned chip and a micro-electro-mechanical system.

[0048] Since the chip of the present application includes a heat dissipating thr...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a chip, an integrated circuit, a micro-electronic mechanical system and a method for forming the chip. The chip comprises semiconductor substrates, the semiconductor substrates comprise silicon through hole openings and cooling silicon through hole structures arranged in the silicon hole openings and provided with micro-heat pipes, the micro-heat pipes have higher cooling capacity compared with metal, therefore the chip has the chip cooling capacity of the cooling silicon through hole structures, and the cooling capacity is improved compared with an existing chip provided with conventional silicon through holes filled with metal.

Description

technical field [0001] The present application relates to the field of semiconductors, and more particularly, to a chip, an integrated circuit and a microelectromechanical system, and a method for forming the chip. Background technique [0002] With the improvement of chip design requirements and the development of manufacturing technology, in order to further reduce the delay of interconnect lines and improve chip performance, the design technology of 3D chips has gradually become a research hotspot in the field of integrated circuit design. [0003] Three-dimensional chip design is to integrate multiple device layers into the same chip to form a vertically stacked structure of multiple two-dimensional chips (die). The three-dimensional chip utilizes the vertical interconnection between chips, which can effectively shorten the length of interconnection lines between device layers and avoid winding on the horizontal plane, thereby reducing the complexity and congestion of wi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/427B81B7/00
Inventor 蔡博修
Owner SEMICON MFG INT (SHANGHAI) CORP