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Tungsten nucleation process to enable low resistivity tungsten feature fill

A technology of nucleation and nucleation layer, applied in the field of characteristic devices

Active Publication Date: 2015-07-01
LAM RES CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Void-free filling in such challenging features using conventional tungsten deposition techniques is problematic

Method used

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  • Tungsten nucleation process to enable low resistivity tungsten feature fill
  • Tungsten nucleation process to enable low resistivity tungsten feature fill
  • Tungsten nucleation process to enable low resistivity tungsten feature fill

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Embodiment Construction

[0025] In the following description, numerous specific details are given to provide a thorough understanding of the described embodiments. The disclosed embodiments may be practiced without some or all of these specific details. In other instances, well known processing operations have not been described in detail so as not to unnecessarily obscure the disclosed embodiments. While the disclosed embodiments are described in association with some embodiments, it is to be understood that this is not intended to be limiting of the disclosed embodiments.

[0026] Various challenges exist in tungsten (W) fill as devices scale to smaller technology nodes. One challenge is preventing resistance increases due to thinner films in contacts and vias. As features become smaller, tungsten contact or line resistance increases due to scattering effects in the thinner tungsten film. Low-resistivity tungsten films minimize energy loss and overheating in integrated circuit designs. A common ...

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Abstract

The invention relates to a tungsten nucleation process to enable low resistivity tungsten feature fill, and particularly discloses a method for depositing low resistivity tungsten in features of semiconductor substrates in semiconductor processing. The method includes using a germanium-containing reducing agent during tungsten nucleation layer deposition to achieve thin and low-resistivity nucleation layers.

Description

technical field [0001] The present invention relates generally to the field of semiconductor processing, and more particularly to apparatus and methods for filling features on a substrate with tungsten. Background technique [0002] The deposition of tungsten-containing materials is an integral part of many semiconductor manufacturing processes. These materials can be used for horizontal interconnects, vias between adjacent metal layers, contacts between first metal layers and devices on silicon substrates, and high aspect ratio features. In a common tungsten deposition process on a semiconductor substrate, the substrate is heated to process temperature in a vacuum chamber and a very thin portion of the tungsten film is deposited as a seed or nucleation layer. Thereafter, the residue of the tungsten film (bulk layer) is deposited on the nucleation layer. The bulk layer typically deposits more rapidly than the nucleation layer. [0003] Thinner and thinner tungsten electri...

Claims

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Application Information

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IPC IPC(8): H01L21/768
CPCH01L21/67011H01L21/76871H01L21/28556C23C16/045C23C16/14C23C16/45525H01L21/76877H01L21/0262H01L21/3205Y10S438/964
Inventor 拉什纳·胡马雍苏达哈·曼安达哈迈克尔·丹克
Owner LAM RES CORP