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Double-sided lithographic method

A double-sided photolithography and photolithography technology, which is applied in the direction of optics, optomechanical equipment, and photolithography on the pattern surface, can solve problems such as rotation deviation, inaccurate mask alignment, and alignment accuracy effects

Active Publication Date: 2015-07-29
CSMC TECH FAB2 CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, inaccurate alignment is common in manual placement of masks, including center deviation, that is, the center of the exposure pattern will deviate from the center of the wafer, and the maximum deviation will reach more than ten millimeters; it also includes rotation deviation, that is, the exposure pattern is relative to the wafer. The flat side of the circle will rotate, up to tens of degrees
Although skilled workers can overcome this problem to a large extent, alignment accuracy is still affected by operating proficiency

Method used

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Embodiment Construction

[0015] figure 1 is a plan view of the positional relationship between the reticle and the substrate in a traditional double-sided lithography process, figure 2 for figure 1 Sectional view along section line A-A'. Most double-sided lithography adopts proximity or contact exposure, so the ratio of the pattern on the photolithography plate to the pattern finally imaged on the substrate is 1:1. refer to figure 2 , the principle of traditional double-sided lithography is to sandwich the substrate 930 between the upper plate 910 and the lower plate 920, and then fix it with a fixture and send it to the exposure machine for exposure, so that the graphics can be directly formed on the substrate . Alignment marks 940 are used between the upper plate 910 and the lower plate 920. However, although the alignment marks 940 can be used between the upper plate 910 and the lower plate 920, the substrate 930 and the upper plate 910 or the lower plate 920 However, there is a lack of alig...

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Abstract

The invention discloses a double-sided lithographic method. The method comprises the steps of: making first alignment marks (101) on one or both sides of a substrate requiring photolithography (100); aligning the photomask and the substrate (100) for the first photolithography by using the first alignment marks (101), and making second alignment marks (103) on the substrate (100); and aligning the photomask with the substrate (100) for subsequent photolithography by using the second alignment marks (103) and making subsequent patterns on the substrate (100), wherein the accuracy of the first alignment marks (101) is higher than that of the second alignment marks (103). The above method can prevent offset of the patterns on the substrate.

Description

technical field [0001] The invention relates to semiconductor manufacturing, in particular to a zero exposure method for a double-sided photolithography machine. Background technique [0002] In the semiconductor process, double-sided processing technology is required in some cases, for example, graphics need to be made on both the front and back sides of the silicon wafer, or when the size of the chip is greater than 2mm. Double-sided processing technology requires the use of special equipment double-sided lithography machine. [0003] The double-sided lithography machine adopts proximity or contact exposure, that is, the optical system projects the pattern on the silicon wafer at a ratio of 1:1. Therefore, the size of the mask used is the same as that of the silicon wafer, and the size and position of the pattern on the mask must also be consistent with the actual situation. In this way, the traditional double-sided photolithography process basically uses manual methods ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F9/00G03F7/00
Inventor 荆二荣
Owner CSMC TECH FAB2 CO LTD
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