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Method for preparing chemical mechanical polishing layer

A technique for polishing layers and optical substrates, applied to parts of grinding machine tools, grinding/polishing equipment, manufacturing tools, etc.

Inactive Publication Date: 2017-09-05
ROHM & HAAS ELECTRONICS MATERIALS CMP HLDG INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Despite strict process controls, conventional processing techniques still result in undesired variations (e.g., pore size and pore distribution) in polished layers produced from batch to batch, date to date, and season to season

Method used

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  • Method for preparing chemical mechanical polishing layer
  • Method for preparing chemical mechanical polishing layer
  • Method for preparing chemical mechanical polishing layer

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Experimental program
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preparation example Construction

[0039] Preferably, the method for preparing a polishing layer of the present invention further includes: providing a mold; and transferring a curable mixture into the mold; wherein the curable mixture undergoes a reaction in the mold to form a cured material.

[0040] Preferably, the preparation method of the polishing layer of the present invention further comprises: providing a mold; providing a temperature control system; transferring the curable mixture into the mold; wherein the curable mixture undergoes a reaction in the mold to form a cured material, and wherein The temperature control system maintains the temperature of the curable mixture as it undergoes a reaction to form a cured material. More preferably, wherein the temperature control system maintains the temperature of the curable mixture as it undergoes a reaction to form a cured material such that during the reaction to form a cured material the curable mixture exhibits The maximum mold curing temperature is 72...

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Abstract

The present invention relates to methods of preparing chemical mechanical polishing layers. A method of manufacturing a polishing layer for polishing a substrate selected from at least one of a magnetic substrate, an optical substrate, and a semiconductor substrate, the method comprising: providing a liquid prepolymer material providing a plurality of hollow microspheres; contacting the plurality of hollow microspheres with a carbon dioxide atmosphere to form a plurality of processed hollow microspheres; making the liquid prepolymer material and the plurality of processed hollow microspheres combining the spheres to form a curable mixture; allowing the curable mixture to undergo a reaction to form a cured material, wherein the reaction is allowed to begin ≦24 hours after forming the plurality of treated hollow microspheres; and At least one polishing layer is obtained from said cured material; wherein said at least one polishing layer has a polishing surface suitable for polishing a substrate.

Description

technical field [0001] The present invention generally relates to the field of preparing polishing layers. In particular, the present invention relates to methods of making polishing layers for chemical mechanical polishing pads. Background technique [0002] In the manufacture of integrated circuits and other electronic devices, layers of conductive, semiconducting, and dielectric materials are deposited on or removed from the surface of a semiconductor wafer. Thin layers of conductive, semiconducting, and dielectric materials can be deposited using a number of deposition techniques. Deposition techniques commonly used in modern processing include physical vapor deposition (PVD) (also known as sputtering), chemical vapor deposition (CVD), plasma-enhanced chemical vapor deposition (PECVD), and electrochemical plating (ECP). [0003] As layers of material are sequentially deposited and removed, the uppermost surface of the wafer becomes uneven. Wafers need to be planarized...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B24B37/26B24B53/00B24B53/017B24D3/28
CPCB24B37/24B24D3/32B24D18/0009H01L21/304H01L21/3212H01L2224/03845
Inventor G·麦克克莱恩A·塞金D·科莱萨尔A·萨拉弗纳斯R·L·波斯特
Owner ROHM & HAAS ELECTRONICS MATERIALS CMP HLDG INC