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Preparation method for multilayered graphene film

A graphene film and multi-layer graphene technology, applied in the field of material preparation and processing, can solve the problems of unsuitable layer-by-layer transfer of multi-layer graphene, weakened doping effect, etc., and achieve the effect of avoiding polymer residue and prolonging effect.

Inactive Publication Date: 2015-08-19
SHANGHAI ADVANCED RES INST CHINESE ACADEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] In view of the above-mentioned shortcoming of prior art, the object of the present invention is to provide a kind of preparation method of multilayer graphene film, for solving the transfer method of graphene film in the prior art is not suitable for the layer-by-layer transfer of multilayer graphene, The problem of diminishing effects of doping over time

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  • Preparation method for multilayered graphene film
  • Preparation method for multilayered graphene film
  • Preparation method for multilayered graphene film

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Embodiment 1

[0063] The present invention provides a kind of preparation method of multilayer graphene film, please refer to figure 1 , shown as a process flow diagram of the method, comprising the following steps:

[0064] S1: forming a polymer support layer on the graphene film grown on the surface of the metal layer;

[0065] S2: Dissolving the metal layer attached to the polymer support layer / graphene film with a solution, and putting the polymer support layer / graphene film into the doping solution for doping;

[0066] S3: covering the polymer support layer / graphene film on another graphene film grown on the surface of the metal layer;

[0067] S4: Dissolving the metal layer attached to the polymer support layer / graphene film with the solution again, and putting the polymer support layer / graphene film into the doping solution for doping;

[0068] S5: covering the polymer support layer / graphene film on the target substrate, and then removing the polymer support layer to obtain a multi...

Embodiment 2

[0094] This embodiment adopts basically the same technical scheme as that of Embodiment 1, the difference is that in Embodiment 1, the steps S2 to S3 are only performed once to obtain a double-layer graphene film located on the surface of the target substrate; and this embodiment In the embodiment, after step S4 is performed, steps S3-S4 are repeated at least once to prepare a three-layer or more graphene film on the surface of the target substrate.

[0095] Specifically, such as figure 1 Shown, the preparation method of described multilayer graphene film comprises the following steps:

[0096] S1: forming a polymer support layer on the graphene film grown on the surface of the metal layer;

[0097] S2: Dissolving the metal layer attached to the polymer support layer / graphene film with a solution, and putting the polymer support layer / graphene film into the doping solution for doping;

[0098] S3: covering the polymer support layer / graphene film on another graphene film grow...

Embodiment 3

[0105] This embodiment adopts basically the same technical solution as Embodiment 1 or Embodiment 2. The difference is that in Embodiment 1 and Embodiment 2, in the step S1 or step S3, the growth on the surface of the metal layer The graphene films are all single-layer graphene, and the finally obtained multi-layer graphene film on the target substrate is formed by stacking a plurality of doped single-layer graphene; and in the present embodiment, in the step S1 Or in step S3, the graphene film grown on the surface of the metal layer can be single-layer graphene or multi-layer graphene (including double-layer graphene).

[0106] In this embodiment, the finally obtained multilayer graphene film on the target substrate can be formed by stacking multiple doped single-layer graphene and doped multilayer graphene, or can be formed by multiple It is made of doped multi-layer graphene. Although there are no doped ions between some layers of graphene films, the doped ions between othe...

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Abstract

The invention provides a preparation method for a multilayered graphene film, which includes the following steps: (S1) a polymer supporting layer is formed on a graphene film growing on the surface of a metal layer; (S2) the metal layer is dissolved, and the polymer supporting layer / graphene film is doped; (S3) another graphene film growing on the surface of a metal layer is covered by the polymer supporting layer / graphene film; (S4) metal layer dissolution and doping are carried out again; (S5) a target substrate is covered by the polymer supporting layer / graphene film, and the polymer supporting layer is removed. By flexibly controlling the frequency of repeating the steps S3 and S4, the graphene film with a needed layer number which is located on the target substrate can be obtained. By repetitively utilizing the polymer supporting layer formed in one step in the process of transfer, the preparation method prevents polymer from remaining among the layers of graphene; moreover, since chemical doping is carried out in the layer-by-layer transfer process, doped ions are located among the layers of graphene, and cannot easily separate from the graphene film, and thereby the doping effect is prolonged.

Description

technical field [0001] The invention relates to the field of material preparation and processing, and relates to a preparation method of a multilayer graphene film. Background technique [0002] Graphene is a two-dimensional crystal material with a single atomic layer composed of carbon atoms in a honeycomb lattice. Due to the unique lattice structure and two-dimensional characteristics of graphene, this material has many excellent properties such as high light transmission, high mechanical strength, high carrier mobility, high thermal conductivity and high specific surface area. It has broad application prospects in many fields such as field effect transistors, flexible transparent electrodes, touch screens, printed electronics, and energy storage devices. Therefore, in recent years, there has been extensive research interest in the growth, transfer and application of graphene thin films at home and abroad. [0003] The chemical vapor deposition (CVD) method is considered...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/04
Inventor 王聪蔡伟方小红陈小源
Owner SHANGHAI ADVANCED RES INST CHINESE ACADEMY OF SCI
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