Trench gate type compound semiconductor power vdmos device and method for improving its breakdown voltage
A compound and semiconductor technology, used in semiconductor devices, circuits, electrical components, etc., can solve the problem of insulation layer breakdown without fundamental improvement, and achieve the effects of avoiding breakdown problems, improving withstand voltage capability, and simple manufacturing process.
Active Publication Date: 2018-04-17
XI AN JIAOTONG UNIV
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The device partially thickens the thickness of the polysilicon in the trench gate and the insulating layer of the conductive region, and designs a drift region with a special shape (as few sharp corners as possible to smooth the electric field distribution) to connect the bottom of the trench gate and the drain, and partially implements the super junction technology. However, the devices used in this patent are mainly for medium-voltage applications (50-100V). Under the premise of maintaining the integration of devices (the width of the groove gate remains unchanged), there is no fundamental improvement in the breakdown of the insulating layer, such as Image 6 shown
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[0031] see Figure 7 As shown, the present invention is a method for improving the breakdown voltage of a trench-gate compound semiconductor power VDMOS device, by introducing more than 3 discontinuous distributed doping in the drift region directly below the trench of the trench-gate compound semiconductor power device impurity region, the discontinuous distributed doping region has the same type of doping as the Body region of the power device and maintains the same potential (each distributed doping region is interconnected with the Body region through a metal layer region), and its doping region The concentration can be adjusted by the process, usually within 2 orders of magnitude from the concentration of the drift region of the device (the doping concentration of the discontinuous distributed doping region is 0.01-100 times the doping concentration of the drift region), but the doping type is opposite ; see Figure 7 As shown, the distributed area is in the open state o...
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The present invention provides a trench-gate type compound semiconductor power VDMOS device and a method for raising puncture voltage thereof. Distributed same-type doped regions has the same electric potential as a Body region are introduced below trenches of the trench-gate type compound semiconductor power VDMOS device, and after a certain backward voltage is applied to a source region of the power device, continuous exhaustion regions are formed below the trenches, thereby avoiding the weakest insulating medium layer puncture problem of the trench-gate type compound semiconductor power VDMOS device, the manufacturing technique is simple, and the voltage endurance capability of the device can be effectively raised.
Description
【Technical field】 [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for improving the breakdown voltage of a trench-gate compound semiconductor power VDMOS device. 【Background technique】 [0002] Power VDMOS devices are majority-carrier semiconductor devices for power processing, and can be generally divided into planar gate VDMOS devices and trench gate VDMOS devices. Among them, the trench-gate VDMOS device is widely used in the industry because of its low on-resistance. The core material of the first-generation power devices is silicon, and its epitaxial technology, high-concentration directional doping technology, high-temperature diffusion technology and surface planarization technology are all very mature. The trench-gate power VDMOS device with silicon as the core material is used in every aspect of our lives. Typical trench-gate power VDMOS devices such as figure 1 As shown (taking NMOS as an example, the same belo...
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IPC IPC(8): H01L29/78H01L29/06
CPCH01L29/0661H01L29/7813
Inventor 云峰张国伟
Owner XI AN JIAOTONG UNIV