A cleaning method for etching reaction chamber

Abstract

The invention discloses a cleaning method of an etching reaction chamber. The etching reaction chamber comprises a reaction chamber and an air inlet unit. The cleaning method comprises the steps of: firstly, introducing a first process gas and washing the air inlet unit to make at least part of reaction by-product on the inner wall of the air inlet unit peel off; secondly, introducing a second process gas to enable the plasma of the second process gas to react with a first by-product which is peeled off and a first by-product on the inner wall of the reaction chamber so as to clean the inner wall of the reaction chamber; thirdly, introducing a third process gas and increasing the pressure of the third process gas to enable the plasma of the third process gas to react with a second by-product which is already peeled off and is not peeled off in the air inlet unit so as to clean the inner wall of the air inlet unit; and finally, increasing the pressure of the second process gas to enable the second process gas to react with the first by-product which is not peeled off in the air inlet unit so as to clean the inner wall of the air inlet unit. By the cleaning method, the risk of agglomeration defect on wafer center caused by residue deposition and dropping of the air inlet unit can be effectively reduced.

Description

technical field [0001] The invention belongs to the field of semiconductor integrated circuit manufacturing equipment and relates to a cleaning method for an etching reaction chamber. Background technique [0002] In recent years, with the development of semiconductor manufacturing technology, the requirements for the integration and performance of components are getting higher and higher. play a pivotal role. Generally speaking, in a plasma etching device, the plasma is generally formed by radio frequency excitation of the etching gas discharged from the inlet unit at the top of the reaction chamber, and the plasma bombards the wafer on the chuck, thereby realizing Etching of the wafer. [0003] figure 1 A schematic structural diagram of an etching reaction chamber is shown. The etching reaction chamber includes a reaction chamber 1 , and an air inlet unit 2 is connected to a reactive gas source (not shown in the figure) outside the reaction chamber for inputting the re...

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Problems solved by technology

Traditionally, when cleaning the reaction chamber, it is mostly carried out in a low vacuum pressure environment. However, the vacuum pumping device usually has a strong pumping capacity, and the plasma of the cleaning reaction gas may not fully react with the by-products. It is quickly drawn away from the reaction chamber by the vacuum pumping device, thereby reducing the cleaning effect; and the air inlet unit located at the far end of the reaction chamber is more difficult to be completely cleaned due to the longer inlet path, resulting in by-products on the inner wall of the air inlet unit Residual overlay, increasing the risk of agglomerated defects falling in the center of the wafer and resulting in lower product yields

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