Method for preventing thin film at edge of silicon chip from being peeled off

Abstract

The invention relates to the field of semiconductors, and especially relates to a method for preventing a thin film at an edge of a silicon chip from being peeled off. A high-stress layer is deposited on a composite thin film layer of a silicon substrate, thereby solving a problem that the thin film at the edge of the silicon chip is peeled off, and eliminating the potential risk caused by the defects of a semiconductor device. The method is compatible with the subsequent technology, and does not generate any adverse effect.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a method for avoiding thin film peeling off at the edge of a silicon wafer. Background technique [0002] With the continuous development of semiconductor technology, it has gradually transitioned from a simple planar structure to a more complex three-dimensional structure, especially the current technology research and development of three-dimensional memory has become a mainstream in international research and development. In order to be able to form a memory with a three-dimensional structure, it is usually necessary to deposit a thicker film and perform etching with a high aspect ratio at the same time, which often brings some new challenges compared with the conventional two-dimensional memory. [0003] Due to the deposition of a thicker film, the stress of the deposited film does not match the substrate silicon wafer, which usually produces a large stress, which leads to a cer...

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Problems solved by technology

[0003] Due to the deposition of a thicker film, the stress of the deposited film does not match the substrate silicon wafer, which usually produces a large stress, which leads to a certain degree of warping of the silicon wafer; due to the need for etching with a high aspect ratio, In order to prevent the photoresist from dumping, it is usually necessary to deposit a hard mask layer with a certain thickness, and the hard mask layer commonly used at present, such as amorphous carbon and other thin films, is relatively brittle, and it is easy to deposit on silicon wafers with a high degree of warpage. Delamination of the film occurs at the edge

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