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A method of manufacturing a semiconductor device structure
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A technology of device structure and fabrication method, applied in semiconductor devices, semiconductor/solid-state device manufacturing, electric solid-state devices, etc., can solve the problems of control gate sidewall control gate and floating gate necking, etc., to avoid damage, achieve remarkable effect, The effect of improving performance
Active Publication Date: 2017-12-08
SEMICON MFG INT (SHANGHAI) CORP
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[0007] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide a method for manufacturing a semiconductor device structure, which is used to solve the problem of avoiding the damage of the sidewall of the control gate and the control gate in the process of manufacturing the sub-gate structure in the prior art. Necking problem with floating gate
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Embodiment 1
[0043] Such as Figure 1 to Figure 9 As shown, this embodiment provides a method for fabricating a semiconductor device structure, which at least includes the following steps:
[0044] Such as Figure 1 ~ Figure 2 As shown, step 1) is performed first, providing a semiconductor substrate 101, and sequentially forming a floating gate oxide layer 102, a floating gate polysilicon layer 103, a dielectric layer 104 and a control gate polysilicon layer 105 on the surface of the semiconductor substrate 101.
[0045] In this embodiment, the semiconductor substrate 101 is a silicon substrate, of course, other expected semiconductor substrates 101 such as silicon carbide substrates, silicon germanium substrates, III-V compound substrates, etc. can be used, It is not limited to the silicon substrate used in this embodiment.
[0046] The floating gate oxide layer 102 is a silicon dioxide layer, which can be thermally oxidized in a furnace tube, atomic layer deposition (ALD), chemical vapo...
Embodiment 2
[0062] Such as Figure 1-9 As shown, this embodiment provides a method for fabricating a semiconductor device structure, the basic steps of which are as in Example 1, wherein the sacrificial layer in step 2-1) is a polymer formed by a plasma deposition process, and the polymer Its precursors include a composition of CH4, SiCl4 and O2, and one of N2. This sacrificial layer manufacturing method can ensure that the device structure can be prepared without transferring the sacrificial layer, saving process steps and improving the process. stability.
[0063] As mentioned above, the present invention provides a method for fabricating a semiconductor device structure, which at least includes the following steps: 1) providing a semiconductor substrate 101, and sequentially forming a floating gate oxide layer 102 and a floating gate polysilicon layer on the surface of the semiconductor substrate 101; 103, a dielectric layer 104 and a control gate polysilicon layer 105; 2) forming bar...
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Abstract
The present invention provides a method for manufacturing a semiconductor device structure, which at least includes the following steps: 1) providing a semiconductor substrate, and sequentially forming a floating gate oxide layer, a floating gate polysilicon layer, a dielectric layer and a control gate polysilicon layer on the surface of the semiconductor substrate layer; 2) forming barrier layers arranged at intervals on the surface of the control gate polysilicon layer, and forming sacrificial sidewalls on both sides of the barrier layer; 3) using the barrier layer and sacrificial sidewalls as a mask, to the Etching the control gate polysilicon layer, and the etching stops at the dielectric layer; 4) removing the sacrificial sidewall; 5) using the barrier layer as a mask to etch the dielectric layer and the floating gate polysilicon layer , etch stops at the floating gate oxide layer. The invention can avoid the damage of the side wall of the control gate and the necking phenomenon between the control gate and the floating gate at the same time during the process of manufacturing the sub-gate structure, and can improve the performance of the device. The steps of the invention are simple, the effect is remarkable, and it is suitable for industrial production.
Description
technical field [0001] The invention belongs to the field of semiconductor manufacturing, in particular to a method for manufacturing a semiconductor device structure. Background technique [0002] Memory is used to store a large amount of digital information. According to recent surveys, memory chips account for about 30% of semiconductor transactions worldwide. Over the years, technological progress and market demand have resulted in more and more high-density various Types of memory, such as RAM (random access memory), DRAM (dynamic random access memory), ROM (read-only memory), EPROM (erasable programmable read-only memory), FLASH (flash memory) and FRAM (ferroelectric memory), etc. , flash memory has become the mainstream of storage technology due to its advantages of convenience, high storage density, and good reliability, and is widely used in various electronic products such as smart cards, SIM cards, microcontrollers, and mobile phones. Since the first flash memory...
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