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Electrostatic discharge protection circuit and semiconductor element

A technology of electrostatic discharge protection and circuit, which is applied in the direction of semiconductor devices, electrical components, semiconductor/solid-state device components, etc., and can solve problems such as damage to integrated circuits

Inactive Publication Date: 2015-08-26
NUVOTON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Electrostatic discharge damage to integrated circuits in electronic devices may partially or sometimes completely stop the operation of integrated circuits

Method used

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  • Electrostatic discharge protection circuit and semiconductor element
  • Electrostatic discharge protection circuit and semiconductor element
  • Electrostatic discharge protection circuit and semiconductor element

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Embodiment Construction

[0034] In order to make the above-mentioned objects, features and advantages of the present invention more comprehensible, some embodiments are given below and described in detail in conjunction with the accompanying drawings.

[0035] figure 1 A simple schematic diagram showing an ESD protection system. The ESD protection system 100 mainly includes a first terminal 101 , an ESD protection circuit 102 , a second terminal 106 and an internal circuit 108 . The first terminal 101 can be coupled to an input / output terminal (Input / Output Pad) or a power supply (Vdd) terminal. The second terminal 106 can be coupled to a low-level power supply (VSS) supply terminal (eg, a ground (GND) terminal). Since an electrostatic discharge (Electrostatic Discharge, ESD) event (for example: ESD surge) occurs on the first terminal 101, the ESD protection circuit 102 coupled between the first terminal 101 and the second terminal 106 can be used to The internal circuit 108 is protected. The ESD ...

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PUM

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Abstract

A semiconductor device is provided. The semiconductor device includes: a high-pass filter circuit, configured to provide a first voltage; an electrostatic discharge (ESD) protection device; and a trigger circuit, coupled to the high-pass filter circuit and the ESD protection device, wherein when an ESD event caused by positive electric charges occurs on a first rail, the trigger circuit provides a second voltage, which is lower than the first voltage, to the ESD protection device, so that electric charges of the ESD event are directed to a second rail through the ESD protection device.

Description

technical field [0001] The embodiments of the present invention relate to semiconductor technology, and in particular to an electrostatic discharge protection circuit and a semiconductor element applied in a semiconductor device. Background technique [0002] When the excess charge accumulated on the surface of an object finds a path to reach an object with a different potential (such as a ground terminal), the sudden and momentary flow of electric current is electrostatic discharge. When electrostatic charge moves into an integrated circuit (IC), it becomes a current that damages or destroys gate oxide, metalization, and junctions. Electrostatic discharge can occur when a charged object touches an integrated circuit, a charged integrated circuit touches a grounded surface, or a charged machine touches an integrated circuit. [0003] Electrostatic discharge is a frequently occurring phenomenon during handling of semiconductor components. Electrostatic charges may accumulat...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/60H01L27/02
CPCH01G17/00H01L27/0266H05K9/0067H01L27/0285
Inventor 林大宪
Owner NUVOTON
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