Method And System For Junction Depth Identification For Ultra Shallow Junctions

Abstract

Provided is a method for identifying material junctions and doping characteristics in semiconductor and other materials by illuminating the material and measuring voltage. A correlation between penetration depth of light and wavelength of light is established for a material. Photons are applied to materials such as semiconductor materials to induce charge. The photons are applied by exposing the material to light having a range of wavelengths. The induced charge results in a measurable voltage. The voltage is measured and the voltage measurements used to determine a junction depth and charge concentration of a material using the correlation between penetration depth of light and wavelength of light.

Description

technical field [0001] The present invention relates generally to semiconductor devices and solar cell devices, and more particularly to methods for identifying, locating and characterizing junctions between different materials or regions with different doping characteristics. Background technique [0002] As technology advances, semiconductor integrated circuit devices, solar cells, other semiconductor devices, and various other devices are formed with smaller and smaller dimensions. Many devices are scaled down to the nanoscale. Especially in this situation, the various device components must be precisely formed and positioned. It is important to use reliable and precise measurement techniques to identify the size and location of these components. For example, it is desirable to identify junctions or interfaces between various materials or between various regions with different doping characteristics. The P-n junction is the active site where the electronic interaction ...

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Problems solved by technology

Identifying the location of these knots is useful, but becomes increasingly challenging as the size gets smaller

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