A semiconductor structure with vertical via interconnection and its manufacturing method

Abstract

The present invention provides a semiconductor structure with vertical via interconnection and a manufacturing method thereof. The semiconductor structure includes a substrate, at least one vertical via interconnection with a petal-shaped cross section, and a metal interconnection layer; the substrate has opposite first and second surfaces; the vertical via interconnection includes A petal-shaped vertical via hole vertically penetrating through the first surface and the second surface of the substrate, and a metal layer conformally covering the sidewall of the vertical via hole, and the petal-shaped vertical via hole has a protruding free end; the metal interconnection layer is disposed on the first surface and / or the second surface of the substrate. The invention can release the thermal stress caused by the thermal expansion coefficient mismatch through the protruding free end in the vertical through hole, can improve the thermal stress problem faced by the traditional solid or hollow silicon via interconnection structure, and improve the interconnection capacity of the vertical through hole. Thermodynamic reliability of semiconductor structures.

Description

technical field [0001] The invention relates to the field of semiconductor structure manufacturing, in particular to a semiconductor structure with vertical through-hole interconnection and a manufacturing method thereof. Background technique [0002] As Moore's Law approaches the physical limit, TSV three-dimensional packaging technology (Through-Si-Via, TSV) realizes three-dimensional integration at the chip level through TSV interconnection technology. It has the characteristics of small volume, high density and three-dimensional heterogeneous integration, and is considered by the industry. It is an important way to break through or even surpass Moore's Law, and has become the frontier and hot spot in the field of advanced packaging and even the field of microelectronics. [0003] TSV / TGV adapter plate technology (Through-Glass-Via, TGV) is an important development direction derived from TSV interconnection technology. The characteristics of small size, high density, and...

AI Technical Summary

Problems solved by technology

Among them, the solid TSV interconnection technology solution is suitable for three-dimensional integration applications of small aperture and high-density TSV interconnection, such as 3D IC, but due to the thermal expansion coefficient mismatch of solid TSV interconnection materials, its thermodynamic reliability is a problem, especially when large When TSVs with apertures and high aspect ratios are interconnected, such as when applied to three-dimensionally integrated TSV adapter boards such as MEMS and micro-nano sensors, the problem of thermodynamic reliability is more difficult

Compared with the solid TSV interconnection, the ring-shaped TSV interconnection scheme filled with organic matter has made some progress in alleviating the problem of thermal stress, and has certain advantages in the application of TSV adapter boards with low-density I / O requirements. However, due to its circular cross-section Ring type, when its temperature changes, due to its symmetry, it will still form a radial extrusion or stretching effect on the surrounding substrate, which is still a major threat to its thermodynamic reliability.

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