Semiconductor structure possessing vertical through hole interconnection and manufacturing method thereof

Abstract

The present invention provides a semiconductor structure possessing vertical through hole interconnection and a manufacturing method thereof. The semiconductor structure comprises a substrate, at least one vertical through hole interconnection of which the cross-section is petaloid and a metal interconnection layer. The substrate possesses the relative first and second surfaces, and the vertical through hole interconnection comprises a vertical through hole which vertically penetrates the first and second surfaces of the substrate and of which the cross-section is petaloid, and a metal layer covering the side wall of the vertical through hole in a shape maintenance manner. The petaloid vertical through hole possesses an interior convex free end, and the metal interconnection layer is arranged on the first and / or second surface of the substrate. According to the present invention, the thermal stress generated by the thermal expansion coefficient mismatch can be released by the interior convex free end of the vertical through hole, the thermal stress problem of a conventional solid or hollow silicon through hole interconnection structure can be improved, and the thermodynamics reliability of the semiconductor structure possessing the vertical through hole interconnection is improved.

Description

technical field [0001] The invention relates to the field of semiconductor structure manufacturing, in particular to a semiconductor structure with vertical through-hole interconnection and a manufacturing method thereof. Background technique [0002] As Moore's Law approaches the physical limit, TSV three-dimensional packaging technology (Through-Si-Via, TSV) realizes three-dimensional integration at the chip level through TSV interconnection technology. It has the characteristics of small volume, high density and three-dimensional heterogeneous integration, and is considered by the industry. It is an important way to break through or even surpass Moore's Law, and has become the frontier and hot spot in the field of advanced packaging and even the field of microelectronics. [0003] TSV / TGV adapter plate technology (Through-Glass-Via, TGV) is an important development direction derived from TSV interconnection technology. The characteristics of small size, high density, and...

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Problems solved by technology

Among them, the solid TSV interconnection technology solution is suitable for three-dimensional integration applications of small aperture and high-density TSV interconnection, such as 3D IC, but due to the thermal expansion coefficient mismatch of solid TSV interconnection materials, its thermodynamic reliability is a problem, especially when large When TSVs with apertures and high aspect ratios are interconnected, such as when applied to three-dimensionally integrated TSV adapter boards such as MEMS and micro-nano sensors, the problem of thermodynamic reliability is more difficult

Compared with the solid TSV interconnection, the ring-shaped TSV interconnection scheme filled with organic matter has made some progress in alleviating the problem of thermal stress, and has certain advantages in the application of TSV adapter boards with low-density I / O requirements. However, due to its circular cross-section Ring type, when its temperature changes, due to its symmetry, it will still form a radial extrusion or stretching effect on the surrounding substrate, which is still a major threat to its thermodynamic reliability.

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